CSD18502KCS

SLPS367A – AUGUST 2012 – REVISED OCTOBER 2012

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ELECTRICAL CHARACTERISTICS

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Static Characteristics

Drain to Source Voltage

40

V

Drain to Source Leakage Current

1

μA

Gate to Source Leakage Current

100

nA

Gate to Source Threshold Voltage

1.5

1.8

2.1

V

3.3

4.3

m

Ω

Drain to Source On Resistance

2.4

2.9

m

Ω

Transconductance

138

S

Dynamic Characteristics

Input Capacitance

3900

4680

pF

Output Capacitance

900

1080

pF

Reverse Transfer Capacitance

21

26

pF

Series Gate Resistance

1.2

2.4

Ω

Gate Charge Total (4.5V)

25

30

nC

Gate Charge Total (10V)

52

62

nC

Gate Charge Gate to Drain

8.4

nC

Gate Charge Gate to Source

10.3

nC

Gate Charge at Vth

7.5

nC

Output Charge

52

nC

Turn On Delay Time

11

ns

Rise Time

7.3

ns

Turn Off Delay Time

33

ns

Fall Time

9.3

ns

Diode Characteristics

Diode Forward Voltage

0.8

1

V

Reverse Recovery Charge

105

nC

di/dt = 300A/

μs

Reverse Recovery Time

48

ns

THERMAL CHARACTERISTICS

PARAMETER

MIN

TYP

MAX

UNIT

Thermal Resistance Junction to Case

0.6

°C/W

Thermal Resistance Junction to Ambient

62

°C/W

2

Submit Documentation Feedback

Copyright © 2012, Texas Instruments Incorporated

Product Folder Links: CSD18502KCS