MMBF0202PLT1

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

0

2

4

8

0

0.6

0.8

1.0

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. Transfer Characteristics

0

1

2

3

4

0

0.6

0.8

1.0

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. On–Region Characteristics

0

100

200

500

0

1

3

4

5

0

–5

–10

–20

0

2

3

4

5

ID, DRAIN CURRENT (AMPS)

Figure 3. On–Resistance versus Drain Current

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 4. On–Resistance versus

Gate–to–Source Voltage

0

10

12

14

16

–50

25

100

150

0.80

1.20

Qg, TOTAL GATE CHARGE (pC)

Figure 5. Gate Charge

TEMPERATURE (

°C)

Figure 6. Threshold Voltage Variance

Over Temperature

0.4

0.4

2

300

400

–15

0

230

690

2270

0.2

125

°C

25

°C

TC = – 55°C

0.2

5 V

VGS = 10, 9, 8, 7, 6 V

VGS = 4.5 V

VGS = 10 V

1

2

4

6

8

3500

VDS = 16 V

ID = 250 µA

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0

50

75

125

6

4 V

3 V

200 mA

50 mA

VDS = 10 V

ID = 200 mA

2160

590

–25