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DIM2400ESS12-A000 Datasheet(PDF) 4 Page - Dynex Semiconductor

Part # DIM2400ESS12-A000
Description  Single Switch IGBT Module
PDF  8 Pages
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

DIM2400ESS12-A000 Datasheet(HTML) 4 Page - Dynex Semiconductor

  DIM2400ESS12-A000 Datasheet HTML 1Page - Dynex Semiconductor DIM2400ESS12-A000 Datasheet HTML 2Page - Dynex Semiconductor DIM2400ESS12-A000 Datasheet HTML 3Page - Dynex Semiconductor DIM2400ESS12-A000 Datasheet HTML 4Page - Dynex Semiconductor DIM2400ESS12-A000 Datasheet HTML 5Page - Dynex Semiconductor DIM2400ESS12-A000 Datasheet HTML 6Page - Dynex Semiconductor DIM2400ESS12-A000 Datasheet HTML 7Page - Dynex Semiconductor DIM2400ESS12-A000 Datasheet HTML 8Page - Dynex Semiconductor  
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DIM2400ESS12-A000
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Units
td(off)
Turn-off delay time
IC = 2400A
VGE = ±15V
VCE = 600V
RG(ON) = 1.0
RG(OFF) = 1.0
LS ~ 50nH
1370
ns
tf
Fall time
230
ns
EOFF
Turn-off energy loss
520
mJ
td(on)
Turn-on delay time
250
ns
tr
Rise time
230
ns
EON
Turn-on energy loss
180
mJ
Qrr
Diode reverse recovery charge
IF = 2400A
VCE = 600V
dIF/dt = 9500A/μs
310
μC
Irr
Diode reverse recovery current
1000
A
Erec
Diode reverse recovery energy
150
mJ
Tcase = 125°C unless stated otherwise
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Units
td(off)
Turn-off delay time
IC = 2400A
VGE = ±15V
VCE = 600V
RG(ON) = 1.0
RG(OFF) = 1.0
LS ~ 50nH
1570
ns
tf
Fall time
230
ns
EOFF
Turn-off energy loss
600
mJ
td(on)
Turn-on delay time
360
ns
tr
Rise time
290
ns
EON
Turn-on energy loss
200
mJ
Qrr
Diode reverse recovery charge
IF = 2400A
VCE = 600V
dIF/dt = 8500A/μs
540
μC
Irr
Diode reverse recovery current
1260
A
Erec
Diode reverse recovery energy
260
mJ



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