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MMBR911LT1

MOTOROLA RF DEVICE DATA

The RF Line

NPN Silicon

High-Frequency Transistor

Designed for low noise, wide dynamic range front–end amplifiers and

low–noise VCO’s. Available in a surface–mountable plastic package. This

Motorola small–signal plastic transistor offers superior quality and performance

at low cost.

• High Gain–Bandwidth Product

fT = 7.0 GHz (Typ) @ 30 mA

• Low Noise Figure

NF = 1.7 dB (Typ) @ 500 MHz

• High Gain

GNF = 17 dB (Typ) @ 10 mA/500 MHz

• State–of–the–Art Technology

Fine Line Geometry

Ion–Implanted Arsenic Emitters

Gold Top Metallization and Wires

Silicon Nitride Passivation

• Available in tape and reel packaging options:

T1 suffix = 3,000 units per reel

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

12

Vdc

Collector–Base Voltage

VCBO

20

Vdc

Emitter–Base Voltage

VEBO

2.0

Vdc

Collector Current — Continuous

IC

60

mA

Power Dissipation @ Tcase = 75°C (1)

Derate linearly above Tcase = 75°C

PD(max)

333

4.44

mW

mW/

°C

Storage Temperature

Tstg

– 55 to +150

°C

Maximum Junction Temperature

TJmax

150

°C

THERMAL CHARACTERISTICS

Rating

Symbol

Value

Unit

Thermal Resistance, Junction to Case

R

θJC

225

°C/W

DEVICE MARKING

MMBR911LT1 = 7P

NOTE:

1. Case temperature measured on collector lead immediately adjacent to body of package.

Order this document

by MMBR911LT1/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MMBR911LT1

IC = 60 mA

LOW NOISE

HIGH–FREQUENCY

TRANSISTOR

NPN SILICON

CASE 318–08, STYLE 6

SOT–23

LOW PROFILE

REV 8