MMBR941 MRF947 MRF9411 SERIES

2–2

MOTOROLA RF DEVICE DATA

MAXIMUM RATINGS

Rating

Symbol

MMBR941LT1, T3

MRF9411LT1

MRF947 Series

Unit

Collector–Emitter Voltage

VCEO

10

10

10

Vdc

Collector–Base Voltage

VCBO

20

20

20

Vdc

Emitter–Base Voltage

VEBO

1.5

1.5

1.5

Vdc

Power Dissipation (1) TC = 75°C

Derate linearly above Tcase = 75°C @

PDmax

0.25

3.33

0.25

3.33

0.188

2.5

Watts

mW/

°C

Collector Current — Continuous (2)

IC

50

50

50

mA

Maximum Junction Temperature

TJmax

150

150

150

°C

Storage Temperature

Tstg

– 55 to +150

– 55 to +150

– 55 to +150

°C

Thermal Resistance,

Junction to Case

R

θJC

300

300

400

°C/W

DEVICE MARKING

MMBR941LT1 = 7Y

MMBR941BLT1 = 7N

MRF947T1, T3 = A

MRF947BT1 = H

MRF9411LT1 = 10

MRF947AT1 = G

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS (3)

Collector–Emitter Breakdown Voltage

(IC = 0.1 mA, IB = 0)

All

V(BR)CEO

10

12

—

Vdc

Collector–Base Breakdown Voltage

(IC = 0.1 mA, IE = 0)

All

V(BR)CBO

20

23

—

Vdc

Emitter Cutoff Current

(VEB = 1.0 V, IC = 0)

All

IEBO

—

—

0.1

µAdc

Collector Cutoff Current

(VCB = 10 V, IE = 0)

All

ICBO

—

—

0.1

µAdc

ON CHARACTERISTICS (3)

DC Current Gain

(VCE = 6.0 V, IC = 5.0 mA) (MMBR941LT1, MRF9411LT1)

(MMBR941BLT1)

hFE

50

100

—

—

200

200

—

DC Current Gain (VCE = 1.0 V, IC = 500 µA)

MRF947T1, MRF947BT1

hFE1

50

—

—

—

DC Current Gain

(VCE = 6.0 V, IC = 5.0 mA)

MRF947T1, T3

MRF947AT1

MRF947BT1

hFE2

hFE3

hFE4

50

75

100

—

—

—

—

150

200

—

DYNAMIC CHARACTERISTICS

Collector–Base Capacitance

(VCB = 10 V, IE = 0, f = 1.0 MHz)

All

Ccb

—

0.35

—

pF

Current Gain — Bandwidth Product

(VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz)

All

fT

—

8.0

—

GHz

NOTE:

1. To calculate the junction temperature use TJ = PD x R

θJC + TCASE. Case temperature measured on collector lead immediately adjacent to

body of package.

2. IC — Continuous (MTBF ≈ 10 years).

3. Pulse width

≤ 300 µs, duty cycle ≤ 2% pulsed.