1A1 – 1A7

1.0A MINIATURE SILICON RECTIFIER

Features

!

Diffused Junction

!

Low Forward Voltage Drop

!

High Current Capability

A

B

A

!

High Reliability

!

High Surge Current Capability

Mechanical Data

C

!

Case: Molded Plastic

D

!

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

!

Polarity: Cathode Band

!

Weight: 0.181 grams (approx.)

!

Mounting Position: Any

!

Marking: Type Number

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

1A1

1A2

1A3

1A4

1A5

1A6

1A7

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

50

100

200

400

600

800

1000

V

RMS Reverse Voltage

35

70

140

280

420

560

700

V

Average Rectified Output Current

(Note 1)

1.0

A

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

30

A

Forward Voltage

1.0

V

Peak Reverse Current

At Rated DC Blocking Voltage

5.0

50

µA

Typical Junction Capacitance (Note 2)

15

pF

Typical Thermal Resistance Junction to Ambient

(Note 1)

50

K/W

Operating Temperature Range

-65 to +125

°C

Storage Temperature Range

-65 to +150

°C

*Glass passivated forms are available upon request

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case

2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.

R-1

Dim

Min

Max

A

20.0

—

B

2.00

3.50

C

0.53

0.64

D

2.20

2.60

All Dimensions in mm

星合电子

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