V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA

FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

V

SD

, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE

FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

1

5

10

50

100

400

.01

.1

1

10

50

0

50

100

150

200

250

300

0.2

0.4

0.6

0.8

1.0

1.2

1.4

APT4014BVR

TC =+25°C

TJ =+150°C

SINGLE PULSE

200

100

50

10

5

1

.5

.1

20

16

12

8

4

0

I

D

= I

D

[Cont.]

15,000

10,000

5,000

1,000

500

100

100

50

10

5

1

OPERATION HERE

LIMITED BY RDS (ON)

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

6.15 (.242) BSC

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

20.80 (.819)

21.46 (.845)

1.65 (.065)

2.13 (.084)

1.01 (.040)

1.40 (.055)

3.50 (.138)

3.81 (.150)

2.87 (.113)

3.12 (.123)

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

2.21 (.087)

2.59 (.102)

0.40 (.016)

0.79 (.031)

Drain

Source

Gate

5.45 (.215) BSC

Dimensions in Millimeters and (Inches)

2-Plcs.

APT's devices are covered by one or more of the following U.S.patents: 4,895,810

5,045,903

5,089,434

5,182,234

5,019,522

5,262,336

5,256,583

4,748,103

5,283,202

5,231,474

5,434,095

5,528,058

TO-247 Package Outline

Crss

Coss

Ciss

VDS=200V

VDS=320V

VDS=80V

TJ =+150°C

TJ =+25°C

10

µS

1mS

10mS

100mS

DC

100

µS