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APT50GF60HR Datasheet(PDF) 2 Page - Advanced Power Technology |
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APT50GF60HR Datasheet(HTML) 2 Page - Advanced Power Technology |
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2 / 2 page  PRELIMINARY Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe DYNAMIC CHARACTERISTICS APT50GF60HR UNIT °C/W MIN TYP MAX 0.70 40 Characteristic Junction to Case Junction to Ambient Symbol RQJC RQJA THERMAL CHARACTERISTICS Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Switching Losses Forward Transconductance Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.5VCES IC = IC2 Resistive Switching (25°C) VGE = 15V VCC = 0.8VCES IC = IC2 RG = 10W Inductive Switching (150°C) VCLAMP(Peak) = 0.66VCES VGE = 15V IC = IC2 RG = 10W TJ = +150°C Inductive Switching (25°C) VCLAMP(Peak) = 0.66VCES VGE = 15V IC = IC2 RG = 10W TJ = +25°C VCE = 20V, IC = IC2 MIN TYP MAX 2600 280 165 170 25 100 20 100 100 110 30 90 280 170 2.2 2.4 4.6 30 90 250 100 4.1 6 UNIT pF nC ns ns mJ ns mJ S 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 I C = IC2, RGE = 25 W, L = 60µH, T j = 25°C 3 See MIL-STD-750 Method 3471 4 The maximum current is limited by lead temperature. APT Reserves the right to change, without notice, the specifications and information contained herein. |
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