MMDF3N04HD

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(Cpk

≥ 2.0)

(1) (3)

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

40

—

—

4.3

—

—

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 40 Vdc, VGS = 0 Vdc)

(VDS = 40 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

0.015

0.15

2.5

10

µAdc

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

—

0.013

500

nAdc

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(Cpk

≥ 2.0)

(1) (3)

(VDS = VGS, ID = 0.25 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

—

2.0

4.9

3.0

—

Vdc

mV/

°C

Static Drain–to–Source On–Resistance

(Cpk

≥ 2.0)

(1) (3)

(VGS = 10 Vdc, ID = 3.4 Adc)

(VGS = 4.5 Vdc, ID = 1.7 Adc)

RDS(on)

—

—

55

79

80

100

m

Ω

Forward Transconductance (VDS = 3.0 Vdc, ID = 1.7 Adc)

(1)

gFS

2.0

4.5

—

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 32 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

—

450

900

pF

Output Capacitance

(VDS = 32 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

—

130

230

Transfer Capacitance

f = 1.0 MHz)

Crss

—

32

96

SWITCHING CHARACTERISTICS(2)

Turn–On Delay Time

(VDD = 20 Vdc, ID = 3.4 Adc,

VGS = 10 Vdc, RG = 6 Ω) (1)

td(on)

—

9.0

18

ns

Rise Time

(VDD = 20 Vdc, ID = 3.4 Adc,

VGS = 10 Vdc, RG = 6 Ω) (1)

tr

—

15

30

Turn–Off Delay Time

(VDD = 20 Vdc, ID = 3.4 Adc,

VGS = 10 Vdc, RG = 6 Ω) (1)

td(off)

—

28

56

Fall Time

tf

—

19

38

Turn–On Delay Time

(VDD = 20 Vdc, ID = 1.7 Adc,

VGS = 4.5 Vdc, RG = 6 Ω) (1)

td(on)

—

13

26

ns

Rise Time

(VDD = 20 Vdc, ID = 1.7 Adc,

VGS = 4.5 Vdc, RG = 6 Ω) (1)

tr

—

77

144

Turn–Off Delay Time

(VDD = 20 Vdc, ID = 1.7 Adc,

VGS = 4.5 Vdc, RG = 6 Ω) (1)

td(off)

—

17

34

Fall Time

tf

—

20

40

Gate Charge

(VDS = 40 Vdc, ID = 3.4 Adc,

VGS = 10 Vdc) (1)

QT

—

13.9

28

nC

(VDS = 40 Vdc, ID = 3.4 Adc,

VGS = 10 Vdc) (1)

Q1

—

2.1

—

(VDS = 40 Vdc, ID = 3.4 Adc,

VGS = 10 Vdc) (1)

Q2

—

3.7

—

Q3

—

5.4

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 3.4 Adc, VGS = 0 Vdc) (1)

(IS = 3.4 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

—

0.87

0.8

1.5

—

Vdc

Reverse Recovery Time

(IS = 3.4 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs) (1)

trr

—

27

—

ns

(IS = 3.4 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs) (1)

ta

—

20

—

dIS/dt = 100 A/µs) (1)

tb

—

7.0

—

Reverse Recovery Storage Charge

QRR

—

0.03

—

µC

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

(3) Reflects typical values.

Cpk =

Max limit – Typ

3 x SIGMA

(4) Repetitive rating; pulse width limited by maximum junction temperature.