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ESDAVLC6-1BV2 Datasheet(PDF) 2 Page - STMicroelectronics

Part # ESDAVLC6-1BV2
Description  Bidirectional device
PDF  9 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

ESDAVLC6-1BV2 Datasheet(HTML) 2 Page - STMicroelectronics

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Characteristics
ESDAVLC6-1BV2
2/9
Doc ID 023822 Rev 1
1
Characteristics
Figure 2.
Electrical characteristics (definitions)
Table 1.
Absolute maximum ratings (Tamb = 25 °C)
Symbol
Parameter
Value
Unit
VPP
Peak pulse voltage
IEC 61000-4-2 contact discharge
IEC 61000-4-2 air discharge
12
15
kV
IPP
Peak pulse current (8/20 µs)(1)
2.5
A
PPP
Peak pulse power (8/20 µs)(1)
45
W
Tj
Operating temperature range
-55 to +150
°C
Tstg
Storage temperature range
- 65 to +150
°C
TL
Maximum lead temperature for soldering during 10 s
260
°C
1.
For a surge greater than the maximum values, the diode will fail in short-circuit.
V
I
VCL
VCL
VBR
VBR
VRM
VRM
IRM
IPP
Slope: 1/Rd
Symbol
Parameter
V
=
Breakdown voltage
V
=
Stand-off voltage
V
=
Clamping voltage
I
=
Peak pulse current
BR
RM
CL
PP
I
=
Leakage current @ V
RM
RM
=
Line capacitance
CLINE
R
=
Dynamic resistance
D
Table 2.
Electrical characteristics (values, Tamb = 25 °C)
Symbol
Parameter
Test conditions
Value
Unit
Min.
Typ.
Max.
VBR
Breakdown voltage
IR = 1 mA
6
V
IRM
Leakage current
VRM = 3 V
50
nA
VCL
Clamping voltage
IPP = 1 A, 8/20 µs
12
V
IPP = 2.5 A maximum, 8/20 µs
18
Cline
Line capacitance, I/O to GND VR = 0 V, F = 1 MHz, Vosc = 30 mV
7.5
8
pF



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