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ESDAVLC6-1BV2 Datasheet(PDF) 2 Page - STMicroelectronics |
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ESDAVLC6-1BV2 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() Characteristics ESDAVLC6-1BV2 2/9 Doc ID 023822 Rev 1 1 Characteristics Figure 2. Electrical characteristics (definitions) Table 1. Absolute maximum ratings (Tamb = 25 °C) Symbol Parameter Value Unit VPP Peak pulse voltage IEC 61000-4-2 contact discharge IEC 61000-4-2 air discharge 12 15 kV IPP Peak pulse current (8/20 µs)(1) 2.5 A PPP Peak pulse power (8/20 µs)(1) 45 W Tj Operating temperature range -55 to +150 °C Tstg Storage temperature range - 65 to +150 °C TL Maximum lead temperature for soldering during 10 s 260 °C 1. For a surge greater than the maximum values, the diode will fail in short-circuit. V I VCL VCL VBR VBR VRM VRM IRM IPP Slope: 1/Rd Symbol Parameter V = Breakdown voltage V = Stand-off voltage V = Clamping voltage I = Peak pulse current BR RM CL PP I = Leakage current @ V RM RM = Line capacitance CLINE R = Dynamic resistance D Table 2. Electrical characteristics (values, Tamb = 25 °C) Symbol Parameter Test conditions Value Unit Min. Typ. Max. VBR Breakdown voltage IR = 1 mA 6 V IRM Leakage current VRM = 3 V 50 nA VCL Clamping voltage IPP = 1 A, 8/20 µs 12 V IPP = 2.5 A maximum, 8/20 µs 18 Cline Line capacitance, I/O to GND VR = 0 V, F = 1 MHz, Vosc = 30 mV 7.5 8 pF |
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