MMDFS2P102

3

Motorola TMOS Product Preview Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Voltage

(VGS = 0 Vdc, ID = 0.25 mA)

Temperature Coefficient (Positive)

V(BR)DSS

20

—

—

25

—

—

Vdc

mV/

°C

Zero Gate Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

—

—

1.0

10

µAdc

Gate Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

—

—

100

nAdc

ON CHARACTERISTICS (2)

Gate Threshold Voltage

(VDS = VGS, ID = 0.25 mA)

Temperature Coefficient (Negative)

VGS(th)

1.0

—

1.5

4.0

2.0

—

Vdc

mV/

°C

Static Drain–Source Resistance

(VGS = 10 Vdc, ID = 2.0 Adc)

(VGS = 4.5 Vdc, ID = 2.5 Adc)

RDS(on)

—

—

0.118

0.152

0.160

0.180

Ohms

Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)

gFS

2.0

3.0

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

16 Vdc V

0 Vdc

Ciss

—

420

588

pF

Output Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

—

290

406

Reverse Transfer Capacitance

f = 1.0 MHz)

Crss

—

116

232

SWITCHING CHARACTERISTICS (3)

Turn–On Delay Time

(V

10 Vd

I

2 0 Ad

td(on)

—

19

38

ns

Rise Time

(VDS = 10 Vdc, ID = 2.0 Adc,

VGS =4 5Vdc

tr

—

66

132

Turn–Off Delay Time

VGS = 4.5 Vdc,

RG = 6.0 Ω)

td(off)

—

25

50

Fall Time

G

)

tf

—

37

74

Gate Charge

(V

16 Vd

I

2 0 Ad

QT

—

15

20

nC

(VDS = 16 Vdc, ID = 2.0 Adc,

Q1

—

1.2

—

( DS

, D

,

VGS = 10 Vdc)

Q2

—

5.0

—

Q3

—

4.0

—

DRAIN SOURCE DIODE CHARACTERISTICS

Forward On–Voltage (2)

(IS = 2.0 Adc,

VGS = 0 Vdc)

VSD

—

1.5

2.1

V

Reverse Recovery Time

(I

2 0 Ad

V

15 V

trr

—

38

—

ns

(IS = 2.0 Adc, VDD = 15 V,

ta

—

17

—

( S

,

DD

,

dIS/dt = 100 A/

µs)

tb

—

21

—

Reverse Recovery Stored Charge

QRR

—

0.034

—

µC

Maximum Instantaneous Forward Voltage (2)

I1 0 A

VF

TJ = 25°C

TJ = 125°C

Volts

IF = 1.0 A

IF = 2.0 A

0.47

0.58

0.39

0.53

Maximum Instantaneous Reverse Current (2)

V20 V

IR

TJ = 25°C

TJ = 125°C

mA

VR = 20 V

0.05

10

Maximum Voltage Rate of Change

VR = 20 V

dV/dt

10,000

V/

ms

(1) Negative sign for P–channel device omitted for clarity.

(2) Pulse Test: Pulse Width

≤ 300 µsec, Duty Cycle ≤ 2.0%.

(3) Switching characteristics are independent of operating temperature.