STP22NM60N datasheet(3/23 Pages) STMICROELECTRONICS

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STB/F/I/P/W22NM60N

Electrical ratings

Doc ID 15853 Rev 4

3/23

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

D²PAK

I²PAK

TO-220

TO-247

TO-220FP

VGS

Gate- source voltage

± 30

Drain current (continuous) at TC = 25 °C

16 (1)

Limited only by maximum temperature allowed

Drain current (continuous) at TC = 100 °C

10 (1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

64 (1)

PTOT

Total dissipation at TC = 25 °C

125

dv/dt(3)

ISD ≤ 16 A, di/dt ≤ 400 A/µs, VDSpeak ≤V(BR)DSS, VDD = 80% V(BR)DSS

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t=1 s;TC=25 °C)

2500

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

D²PAK

I²PAK TO-220 TO-247 TO-220FP

Rthj-case

Thermal resistance junction-case

max.

14.17

°C/W

Rthj-amb

Thermal resistance junction-

ambient max.

62.5

°C/W

Rthj-pcb

(1)

When mounted on 1inch² FR-4 board, 2 oz Cu

Thermal resistance junction-pcb

max.

°C/W

Maximum lead temperature for

soldering purpose

300

°C/W

Table 4.

Thermal data

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by TJ max)

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID = IAR, VDD = 50 V)

300

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