ACE4444B datasheet(1/6 Pages) ACE

Part #	ACE4444B

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	6 Pages

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Manufacturer	ACE [ACE Technology Co., LTD.]

Direct Link	http://www.ace-ele.com

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ACE4444B

N-Channel Enhancement Mode Field Effect Transistor

VER 1.2

1

Description

The ACE4444B uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications. The source leads are separated to

allow a Kelvin connection to the source, which may be used to bypass the source inductance.

Features

 V

DS(V)=30V

 I

D=20A (VGS=10V)

 R

DS(ON)＜5.5mΩ (VGS=10V)

 R

DS(ON)＜8.5mΩ (VGS=4.5V)

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

30

V

Gate-Source Voltage

VGSS

±20

V

Drain Current (Continuous) *AC

TA=25

OC

ID

20

A

TA=70

OC

17

Drain Current (Pulse) *B

IDM

80

Power Dissipation

TA=25

OC

PD

3

W

TA=70

OC

2.1

Operating and Storage Temperature Range

TJ,TSTG -55 to 150

OC

Packaging Type

SOP-8

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ACE4444B Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

ACE4444B Datasheet(HTML) 1 Page - ACE Technology Co., LTD.

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