ACE4446B datasheet(1/6 Pages) ACE

Part #	ACE4446B

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	6 Pages

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Manufacturer	ACE [ACE Technology Co., LTD.]

Direct Link	http://www.ace-ele.com

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ACE4446B

N-Channel Enhancement Mode Field Effect Transistor

VER 1.2

1

Description

The ACE4446B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This

device is suitable for use as a load switch or in PWM applications. The source leads are separated to

allow a kelvin connection to the source, which may be used to bypass the source inductance.

Features

 V

DS(V)=30V

 I

D=15A (VGS=10V)

 R

DS(ON)＜8.5mΩ (VGS=10V)

 R

DS(ON)＜13mΩ (VGS=4.5V)

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

30

V

Gate-Source Voltage

VGSS

±20

V

Drain Current (Continuous) *AC

TA=25

OC

ID

15

A

TA=70

OC

12

Drain Current (Pulse) *B

IDM

50

Power Dissipation

TA=25

OC

PD

3.5

W

TA=70

OC

2

Operating and Storage Temperature Range

TJ,TSTG -55 to 150

OC

Packaging Type

DFN3*3-8L

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ACE4446B Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

ACE4446B Datasheet(HTML) 1 Page - ACE Technology Co., LTD.

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