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STPS1045B-Y Datasheet(PDF) 2 Page - STMicroelectronics

Part # STPS1045B-Y
Description  Automotive power Schottky rectifier
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS1045B-Y Datasheet(HTML) 2 Page - STMicroelectronics

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Characteristics
STPS1045B-Y
2/7
Doc ID 17265 Rev 1
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 0.42 x IF(AV) + 0.015 IF
2
(RMS)
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
45
V
IF(RMS)/pin Forward rms current
7
A
IF(AV)
Average forward current
Tc = 150 °C δ = 0.5
10
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
75
A
IRRM
Repetitive peak reverse current
tp = 2 µs, F= 1 kHz
1
A
PARM
Repetitive peak avalanche power
tp = 1 µs, Tj = 25 °C
4000
W
Tstg
Storage temperature range
-65 to +175
°C
Tj
Operating junction temperature range(1)
1.
condition to avoid thermal runaway for a diode on its own heatsink
-40 to +175
°C
dV/dt
Critical rate of rise of reverse voltage
10000
V/µs
Table 3.
Thermal parameters
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
3
°C/W
Table 4.
Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
1.
Pulse test: tp = 5 ms, δ < 2%
Reverse leakage
current
Tj = 25 °C
VR = VRRM
-
-
100
μA
Tj = 125 °C
-
7
15
mA
VF
(2)
2.
Pulse test: tp = 380 µs, δ < 2%
Forward voltage drop
Tj = 25 °C
IF = 10 A
-
-
0.63
V
Tj = 125 °C
-
0.50
0.57
Tj = 25 °C
IF = 20 A
-
-
0.84
Tj = 125 °C
-
0.65
0.72
dPtot
dTj
---------------
1
Rth j a
()
--------------------------
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