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STM32F303VC Datasheet(PDF) 60 Page - STMicroelectronics

Part # STM32F303VC
Description  ARM Cortex-M4F 32b MCUFPU, up to 256KB Flash48KB SRAM
PDF  133 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F303VC Datasheet(HTML) 60 Page - STMicroelectronics

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Electrical characteristics
STM32F302xx/STM32F303xx
60/133
Doc ID 023353 Rev 5
6.3.4
Embedded reference voltage
The parameters given in Table 26 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 22.
Table 25.
Programmable voltage detector characteristics
Symbol
Parameter
Conditions
Min(1)
1.
Data based on characterization results only, not tested in production.
Typ
Max(1)
Unit
VPVD0
PVD threshold 0
Rising edge
2.1
2.18
2.26
V
Falling edge
2
2.08
2.16
VPVD1
PVD threshold 1
Rising edge
2.19
2.28
2.37
Falling edge
2.09
2.18
2.27
VPVD2
PVD threshold 2
Rising edge
2.28
2.38
2.48
Falling edge
2.18
2.28
2.38
VPVD3
PVD threshold 3
Rising edge
2.38
2.48
2.58
Falling edge
2.28
2.38
2.48
VPVD4
PVD threshold 4
Rising edge
2.47
2.58
2.69
Falling edge
2.37
2.48
2.59
VPVD5
PVD threshold 5
Rising edge
2.57
2.68
2.79
Falling edge
2.47
2.58
2.69
VPVD6
PVD threshold 6
Rising edge
2.66
2.78
2.9
Falling edge
2.56
2.68
2.8
VPVD7
PVD threshold 7
Rising edge
2.76
2.88
3
Falling edge
2.66
2.78
2.9
VPVDhyst
(2)
2.
Guaranteed by design, not tested in production.
PVD hysteresis
-
100
-
mV
IDD(PVD)
PVD current
consumption
-
0.15
0.26
µA
Table 26.
Embedded internal reference voltage
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VREFINT
Internal reference voltage
–40 °C < TA < +105 °C 1.16
1.2
1.25
V
–40 °C < TA < +85 °C
1.16
1.2
1.24(1)
V
TS_vrefint
ADC sampling time when
reading the internal
reference voltage
2.2
-
-
µs
VRERINT
Internal reference voltage
spread over the
temperature range
VDD = 3 V ±10 mV
-
-
10(2)
mV
TCoeff
Temperature coefficient
-
-
100(2)
ppm/°C



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