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STM32F303VC Datasheet(PDF) 60 Page - STMicroelectronics |
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STM32F303VC Datasheet(HTML) 60 Page - STMicroelectronics |
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60 / 133 page ![]() Electrical characteristics STM32F302xx/STM32F303xx 60/133 Doc ID 023353 Rev 5 6.3.4 Embedded reference voltage The parameters given in Table 26 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 22. Table 25. Programmable voltage detector characteristics Symbol Parameter Conditions Min(1) 1. Data based on characterization results only, not tested in production. Typ Max(1) Unit VPVD0 PVD threshold 0 Rising edge 2.1 2.18 2.26 V Falling edge 2 2.08 2.16 VPVD1 PVD threshold 1 Rising edge 2.19 2.28 2.37 Falling edge 2.09 2.18 2.27 VPVD2 PVD threshold 2 Rising edge 2.28 2.38 2.48 Falling edge 2.18 2.28 2.38 VPVD3 PVD threshold 3 Rising edge 2.38 2.48 2.58 Falling edge 2.28 2.38 2.48 VPVD4 PVD threshold 4 Rising edge 2.47 2.58 2.69 Falling edge 2.37 2.48 2.59 VPVD5 PVD threshold 5 Rising edge 2.57 2.68 2.79 Falling edge 2.47 2.58 2.69 VPVD6 PVD threshold 6 Rising edge 2.66 2.78 2.9 Falling edge 2.56 2.68 2.8 VPVD7 PVD threshold 7 Rising edge 2.76 2.88 3 Falling edge 2.66 2.78 2.9 VPVDhyst (2) 2. Guaranteed by design, not tested in production. PVD hysteresis - 100 - mV IDD(PVD) PVD current consumption - 0.15 0.26 µA Table 26. Embedded internal reference voltage Symbol Parameter Conditions Min Typ Max Unit VREFINT Internal reference voltage –40 °C < TA < +105 °C 1.16 1.2 1.25 V –40 °C < TA < +85 °C 1.16 1.2 1.24(1) V TS_vrefint ADC sampling time when reading the internal reference voltage 2.2 - - µs VRERINT Internal reference voltage spread over the temperature range VDD = 3 V ±10 mV - - 10(2) mV TCoeff Temperature coefficient - - 100(2) ppm/°C |
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