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SST310 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SST310 Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 7 page  J/SST/U308 Series Vishay Siliconix www.vishay.com 7-2 Document Number: 70237 S-04028—Rev. G, 04-Jun-01 ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage –25 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate Current : (J/SST Prefixes) 10 mA . . . . . . . . . . . . . . . . . . . . (U Prefix) 20 mA . . . . . . . . . . . . . . . . . . . . . . . . . . Lead Temperature (1/16” from case for 10 sec.) 300 _C . . . . . . . . . . . . . . . . . . . Storage Temperature : (J/SST Prefixes) –55 to 150 _C . . . . . . . . . . . . . . (U Prefix) –65 to 175 _C . . . . . . . . . . . . . . . . . . . . Operating Junction Temperature –55 to 150 _C . . . . . . . . . . . . . . . . . . . . . . . . . . Power Dissipation : (J/SST Prefixes)a 350 mW . . . . . . . . . . . . . . . . . (U Prefix)b 500 mW . . . . . . . . . . . . . . . . . . . . . . . Notes a. Derate 2.8 mW/ _C above 25_C b. Derate 4 mW/ _C above 25_C SPECIFICATIONS FOR J/SST308, J/SST309 AND J/SST310 (TA = 25_C UNLESS NOTED) Limits J/SST308 J/SST309 J/SST310 Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit Static Gate-Source Breakdown Voltage V(BR)GSS IG = –1 mA , VDS = 0 V –35 –25 –25 –25 V Gate-Source Cutoff Voltage VGS(off) VDS = 10 V, ID = 1 nA –1 –6.5 –1 –4 –2 –6.5 V Saturation Drain Currentb IDSS VDS = 10 V, VGS = 0 V 12 60 12 30 24 60 mA VGS = –15 V, VDS = 0 V –0.002 –1 –1 –1 nA Gate Reverse Current IGSS TA = 125_C –0.001 –1 –1 –1 mA Gate Operating Current IG VDG = 9 V, ID = 10 mA –15 pA Drain-Source On-Resistance rDS(on) VGS = 0 V, ID = 1 mA 35 W Gate-Source Forward Voltage VGS(F) IG = 10 mA VDS = 0 V J 0.7 1 1 1 V Dynamic Common-Source Forward Transconductance gfs VDS = 10 V, ID = 10 mA 14 8 10 8 mS Common-Source Output Conductance gos VDS = 10 V, ID = 10 mA f = 1 kHz 110 250 250 250 mS Common-Source J 4 5 5 5 Common-Source Input Capacitance Ciss VDS = 10 V SST 4 Common-Source DS VGS = –10 V f = 1 MHz J 1.9 2.5 2.5 2.5 pF Common-Source Reverse Transfer Capacitance Crss f = 1 MHz SST 1.9 Equivalent Input Noise Voltage en VDS = 10 V, ID = 10 mA f = 100 Hz 6 nV ⁄ √Hz High Frequency Common-Gate f = 105 MHz 14 Common-Gate Forward Transconductance gfg f = 450 MHz 13 Common-Gate f = 105 MHz 0.16 mS Common-Gate Output Conductance gog VDS = 10 V f = 450 MHz 0.55 VDS = 10 V ID = 10 mA f = 105 MHz 16 Common-Gate Power Gainc Gpg f = 450 MHz 11.5 f = 105 MHz 1.5 dB Noise Figure NF f = 450 MHz 2.7 Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NZB b. Pulse test: PW v300 ms duty cycle v3%. c. Gain (Gpg) measured at optimum input noise match. |
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