1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

One Watt High Voltage Transistor

NPN Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector – Emitter Voltage

VCEO

300

Vdc

Collector – Base Voltage

VCBO

300

Vdc

Emitter – Base Voltage

VEBO

6.0

Vdc

Collector Current — Continuous

IC

500

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

1.0

8.0

Watt

mW/

°C

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

2.5

20

Watts

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

125

°C/W

Thermal Resistance, Junction to Case

RqJC

50

°C/W

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage(1)

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

300

—

Vdc

Collector–Base Breakdown Voltage

(IC = 100 µAdc, IE = 0)

V(BR)CBO

300

—

Vdc

Emitter–Base Breakdown Voltage

(IE = 100 µAdc, IC = 0)

V(BR)EBO

6.0

—

Vdc

Collector Cutoff Current

(VCB = 200 Vdc, IE = 0)

ICBO

—

0.2

µAdc

Emitter Cutoff Current

(VEB = 6.0 Vdc, IC = 0)

IEBO

—

0.1

µAdc

1. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

Order this document

by MPSW10/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MPSW10

CASE 29–05, STYLE 1

TO–92 (TO–226AE)

1

2

3

COLLECTOR

3

2

BASE

1

EMITTER