NST489AMT1G datasheet(2/4 Pages) ONSEMI

2 / 4 page

NST489AMT1, NSVT489AMT1G

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (IC = 10 mA, IB = 0)

V(BR)CEO

−

Collector−Base Breakdown Voltage (IC = 0.1 mA, IE = 0)

V(BR)CBO

−

Emitter−Base Breakdown Voltage (IE = 0.1 mA, IC = 0)

V(BR)EBO

5.0

−

Collector Cutoff Current (VCB = 30 V, IE = 0)

ICBO

−

0.1

Collector−Emitter Cutoff Current (VCES = 30 V)

ICES

−

0.1

Emitter Cutoff Current (VEB = 4.0 V)

IEBO

−

0.1

ON CHARACTERISTICS

DC Current Gain (Note 4)

(IC = 1.0 mA, VCE = 5.0 V)

(IC = 0.5 A, VCE = 5.0 V)

(IC = 1.0 A, VCE = 5.0 V)

hFE

300

200

−

500

−

900

−

Collector−Emitter Saturation Voltage (Note 4)

(IC = 1.0 A, IB = 100 mA)

(IC = 0.5 A, IB = 50 mA)

(IC = 0.1 A, IB = 1.0 mA)

VCE(sat)

−

0.10

0.06

0.05

0.200

0.125

0.075

Base −Emitter Saturation Voltage (Note 4) (IC = 1.0 A, IB = 0.1 A)

VBE(sat)

−

1.1

Base −Emitter Turn−on Voltage (Note 4) (IC = 1.0 A, VCE = 2.0 V)

VBE(on)

−

1.1

Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz

200

300

−

MHz

Output Capacitance (f = 1.0 MHz)

Cobo

−

4. Pulsed Condition: Pulse Width  300 msec, Duty Cycle  2%.

Figure 1. VCE (sat) versus Ib

0.001

0.2

0.01

0.1

1.0

0.1

Ib (A)

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

Figure 2. VCE (sat) versus Ic

0.001

0.01

0.1

1.0

0.1

Ic (A)

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

IC = 2 A

IC = 1 A

IC = 500 mA

IC = 100 mA

Ic/Ib = 100

Ic/Ib = 10

Figure 3. hFE versus Ic

Figure 4. VBE(on) versus Ic

0.001

0.01

0.1

1.2

Ic (A)

0.2

0.4

0.6

0.8

1.0

+125C

+25C

−55C

VCE = 5 V

0.001

0.01

0.1

800

100

Ic (A)

200

300

400

500

600

700

+125C

+25C

−55C

VCE = 5 V

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