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STM32F050C4 Datasheet(PDF) 57 Page - STMicroelectronics |
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STM32F050C4 Datasheet(HTML) 57 Page - STMicroelectronics |
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57 / 97 page ![]() STM32F050xx Electrical characteristics Doc ID 023683 Rev 1 57/97 6.3.7 Internal clock source characteristics The parameters given in Table 33 are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 15: General operating conditions. The provided curves are characterization results, not tested in production. High-speed internal (HSI) RC oscillator Figure 16. HSI oscillator accuracy characterization results Table 33. HSI oscillator characteristics(1) 1. VDDA = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - 8 MHz TRIM HSI user trimming step - - 1(2) 2. Guaranteed by design, not tested in production. % DuCy(HSI) Duty cycle 45(2) -55(2) % ACCHSI Accuracy of the HSI oscillator (factory calibrated) TA = –40 to 105 °C –3.8(3) 3. Data based on characterization results, not tested in production. -4.6(3) % TA = –10 to 85 °C –2.9(3) -2.9(3) % TA = 0 to 70 °C –2.3(3) -2.2(3) % TA = 25 °C –1 - 1 % tsu(HSI) HSI oscillator startup time 1(2) -2(2) µs IDDA(HSI) HSI oscillator power consumption - 80 100(2) µA |
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