CY62156ESL datasheet(4/16 Pages) CYPRESS

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CY62156ESL MoBL®

Document Number: 001-54995 Rev. *D

Page 4 of 16

Maximum Ratings

Exceeding the maximum ratings may impair the useful life of the

device. User guidelines are not tested.

Storage Temperature ............................... –65 °C to + 150°C

Ambient Temperature with

Power Applied ........................................ –55 °C to + 125 °C

Supply Voltage to Ground Potential ...............–0.5 V to 6.0 V

DC Voltage Applied to Outputs

in High Z State [4, 5] ........................................–0.5 V to 6.0 V

DC Input Voltage [4, 5] ....................................–0.5 V to 6.0 V

Output Current into Outputs (LOW) ............................ 20 mA

Static Discharge Voltage

(MIL-STD-883, Method 3015) ................................. > 2,001V

Latch Up Current ................................................... > 200 mA

Operating Range

Device

Range

Ambient

Temperature

VCC[6]

CY62156ESL

Industrial

–40 °C to +85 °C 2.2 V to 3.6 V,

and

4.5 V to 5.5 V

Electrical Characteristics

Over the Operating Range

Parameter

Description

Test Conditions

45 ns

Unit

Min

Typ [1]

Max

VOH

Output HIGH Voltage

2.2 < VCC < 2.7

IOH = –0.1 mA

2.0

–

2.7 < VCC < 3.6

IOH = –1.0 mA

2.4

–

4.5 < VCC < 5.5

IOH = –1.0 mA

2.4

–

VOL

Output LOW Voltage

2.2 < VCC < 2.7

IOL = 0.1 mA

–

0.4

2.7 < VCC < 3.6

IOL = 2.1mA

–

0.4

4.5 < VCC < 5.5

IOL = 2.1mA

–

0.4

VIH

Input HIGH Voltage

2.2 < VCC < 2.7

1.8

–

VCC + 0.3

2.7 < VCC < 3.6

2.2

–

VCC + 0.3

4.5 < VCC < 5.5

2.2

–

VCC + 0.5

VIL

Input LOW Voltage

2.2 < VCC < 2.7

–0.3

–

0.6

2.7 < VCC < 3.6

–0.3

–

0.8

4.5 < VCC < 5.5

–0.5

–

0.8

IIX

Input Leakage Current

GND < VI < VCC

–1

–

A

IOZ

Output Leakage Current

GND < VO < VCC, Output Disabled

–1

–

A

ICC

VCC Operating Supply Current

f = fmax = 1/tRC

VCC = VCCmax,

IOUT = 0 mA,

CMOS levels

–18

f = 1 MHz

–

1.8

ISB1

Automatic CE Power down

Current – CMOS Inputs

CE1 > VCC 0.2 V, CE2 < 0.2 V,

VIN > VCC – 0.2 V or VIN < 0.2 V,

f = fmax (Address and Data Only),

f = 0 (OE, BHE, BLE and WE),

VCC = VCC(max)

–28

A

ISB2 [7]

Automatic CE Power down

Current – CMOS Inputs

CE1 > VCC – 0.2 V or CE2 < 0.2 V,

VIN > VCC – 0.2 V or VIN < 0.2 V,

f = 0, VCC = VCC(max)

–28

A

Notes

4. VIL(min) = –2.0 V for pulse durations less than 20 ns.

5. VIH(max) = VCC + 0.75 V for pulse durations less than 20 ns.

6. Full Device AC operation assumes a 100

s ramp time from 0 to VCC(min) and 200 s wait time after VCC stabilization.

7. Only chip enables (CE1 and CE2) need to be tied to CMOS levels to meet the ISB2 / ICCDR spec. Other inputs can be left floating.

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