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DMN26DOUT-7 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMN26DOUT-7
Description  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  6 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN26DOUT-7 Datasheet(HTML) 2 Page - Diodes Incorporated

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DMN26D0UT
Document number: DS31854 Rev. 2 - 2
2 of 6
www.diodes.com
September 2009
© Diodes Incorporated
DMN26D0UT
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
BVDSS
20
⎯
⎯
V
VGS = 0V, ID = 100μA
Zero Gate Voltage Drain Current
@ TC = 25°C
IDSS
⎯
⎯
500
nA
VDS = 20V, VGS = 0V
Gate-Body Leakage
IGSS
⎯
⎯
±1
±500
±100
μA
nA
nA
VGS = ±10V, VDS = 0V
VGS = ±8V, VDS = 0V
VGS = ±5V, VDS = 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
VGS(th)
0.5
⎯
1.0
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS (ON)
⎯
⎯
⎯
⎯
⎯
1.8
2.4
2.9
3.7
5.4
3.0
4.0
6.0
10.0
15.0
Ω
VGS = 4.5V, ID = 100mA
VGS = 2.5V, ID = 50mA
VGS = 1.8V, ID = 20mA
VGS = 1.5V, ID = 10mA
VGS = 1.2V, ID = 1mA
Forward Transconductance
|Yfs|
⎯
242
⎯
mS
VDS =10V, ID = 0.1A
Source-Drain Diode Forward Voltage
VSD
0.5
⎯
1.0
V
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
⎯
14.1
⎯
pF
VDS = 15V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
⎯
2.9
⎯
pF
Reverse Transfer Capacitance
Crss
⎯
1.6
⎯
pF
SWITCHING CHARACTERISTICS, VGS = 4.5V (Note 5)
Turn-On Delay Time
td(on)
⎯
3.8
⎯
ns
VGS = 4.5V, VDD = 10V
ID = 200mA, RG = 2.0Ω
Rise Time
tr
⎯
7.9
⎯
Turn-Off Delay Time
td(off)
⎯
13.4
⎯
Fall Time
tf
⎯
15.2
⎯
Notes:
4. Short duration pulse test used to minimize self-heating effect.
5. Switching characteristics are independent of operating junction temperature.
0
0.5
1
1.5
2
2.5
3
Fig. 1 Typical Output Characteristic
V
, DRAIN-SOURCE VOLTAGE (V)
DS
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V
= 2.0V
GS
V
= 3.0V
GS
V
= 4.5V
GS
V
= 8V
GS
V
= 2.5V
GS
V
= 1.5V
GS
0
0.5
1
1.5
2
2.5
3
Fig. 2 Typical Transfer Characteristic
V
, GATE-SOURCE VOLTAGE (V)
GS
0
0.1
0.2
0.3
0.4
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V
= 10V
DS



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