STF21N65M5 datasheet(5/22 Pages) STMICROELECTRONICS

Part #	STF21N65M5

Description	N-channel 650 V, 0.150 Ω, 17 A MDmesh™V Power MOSFET D²PAK, TO-220FP, TO-220, I²PAK, TO-247

PDF	22 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 22 page

STB/F/I/P/W21N65M5

Electrical characteristics

Doc ID 15427 Rev 4

5/22

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td (v)

tr (v)

tf (i)

tc(off)

Voltage delay time

Voltage rise time

Current fall time

Crossing time

VDD = 400 V, ID = 11 A,

RG = 4.7 Ω, VGS = 10 V

(see

Figure 21)

(see

Figure 24)

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

Pulse width limited by safe operating area.

Source-drain current

Source-drain current (pulsed)

VSD

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 17 A, VGS = 0

1.5

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 17 A, di/dt = 100 A/µs

VDD = 100 V (see Figure 21)

294

µC

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 17 A, di/dt = 100 A/µs

VDD = 100 V, Tj = 150 °C

(see

Figure 21)

340

µC

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