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ADC101S051CISDX Datasheet(PDF) 3 Page - TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS |
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ADC101S051CISDX Datasheet(HTML) 3 Page - TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS |
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3 / 16 page  Absolute Maximum Ratings (Notes 1, 2) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Analog Supply Voltage V A −0.3V to 6.5V Voltage on Any Analog Pin to GND −0.3V to (V A +0.3V) Voltage on Any Digital Pin to GND −0.3V to 6.5V Input Current at Any Pin (Note 3) ±10 mA Package Input Current (Note 3) ±20 mA Power Consumption at T A = 25˚C See (Note 4) ESD Susceptibility (Note 5) Human Body Model Machine Model 3500V 300V Junction Temperature +150˚C Storage Temperature −65˚C to +150˚C Operating Ratings (Notes 1, 2) Operating Temperature Range −40˚C ≤ T A ≤ +85˚C V A Supply Voltage +2.7V to +5.25V Digital Input Pins Voltage Range (regardless of supply voltage) −0.3V to 5.25V Analog Input Pins Voltage Range 0V to V A Clock Frequency 1 MHz to 10 MHz Sample Rate up to 500 ksps Package Thermal Resistance Package θ JA 6-lead LLP 94˚C / W 6-lead SOT-23 265˚C / W Soldering process must comply with National Semiconduc- tor’s Reflow Temperature Profile specifications. Refer to www.national.com/packaging. (Note 6) ADC101S051 Converter Electrical Characteristics (Notes 7, 9) The following specifications apply for V A = +2.7V to 5.25V, fSCLK = 4 MHz to 10 MHz, fSAMPLE = 200 ksps to 500 ksps, C L = 15 pF, unless otherwise noted. Boldface limits apply for TA =TMIN to TMAX: all other limits TA = 25˚C. Symbol Parameter Conditions Typical Limits (Note 9) Units STATIC CONVERTER CHARACTERISTICS Resolution with No Missing Codes 10 Bits INL Integral Non-Linearity V A = +2.7 to +3.6V +0.12 ±0.7 LSB (max) −0.08 LSB (min) V A = +4.75 to +5.25V +0.15 ±0.7 LSB (max) −0.09 LSB (min) DNL Differential Non-Linearity V A = +2.7 to +3.6V +0.15 ±0.6 LSB (max) −0.11 LSB (min) V A = +4.75 to +5.25V +0.15 ±0.6 LSB (max) −0.11 LSB (min) V OFF Offset Error V A = +2.7 to +3.6V +0.21 ±0.7 LSB (max) V A = +4.75 to +5.25V +0.11 ±0.7 LSB (max) GE Gain Error V A = +2.7 to +3.6V −0.2 ±1.0 LSB (max) V A = +4.75 to +5.25V −0.33 ±1.0 LSB (max) DYNAMIC CONVERTER CHARACTERISTICS SINAD Signal-to-Noise Plus Distortion Ratio V A = +2.7 to 5.25V f IN = 100 kHz, −0.02 dBFS 61.5 60.8 dB (min) SNR Signal-to-Noise Ratio V A = +2.7 to 5.25V f IN = 100 kHz, −0.02 dBFS 61.6 61.1 dB (min) THD Total Harmonic Distortion V A = +2.7 to 5.25V f IN = 100 kHz, −0.02 dBFS −79 −72.5 dB (max) SFDR Spurious-Free Dynamic Range V A = +2.7 to 5.25V f IN = 100 kHz, −0.02 dBFS 81 74 dB (min) ENOB Effective Number of Bits V A = +2.7 to 5.25V f IN = 100 kHz, −0.02 dBFS 9.9 9.8 Bits (min) IMD Intermodulation Distortion, Second Order Terms V A = +5.25V f a = 103.5 kHz, fb = 113.5 kHz −83 dB Intermodulation Distortion, Third Order Terms V A = +5.25V f a = 103.5 kHz, fb = 113.5 kHz −82 dB www.national.com 3 |
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