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MMDF6N03HDR2 Datasheet(PDF) 2 Page - ON Semiconductor |
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MMDF6N03HDR2 Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 10 page ![]() MMDF6N03HD http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) V(BR)DSS 30 − − Vdc Zero Gate Voltage Drain Current (VDS = 24 Vdc, VGS = 0 Vdc) (VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS − − − − 1.0 20 μAdc Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS − − 100 nAdc ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (VDS = VGS, ID = 0.25 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) 1.0 − − Vdc Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 5.0 Adc) (VGS = 4.5 Vdc, ID = 3.9 Adc) RDS(on) − − 28 42 35 50 mΩ Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc) gFS − 9.0 − Mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 24 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss − 430 600 pF Output Capacitance Coss − 217 300 Transfer Capacitance Crss − 67.5 135 SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time (VDD = 15 Vdc, VGS = 10 Vdc, ID = 1.0 Adc, RG = 6.0 Ω) td(on) − 8.2 16.4 ns Rise Time tr − 8.48 16.9 Turn−Off Delay Time td(off) − 89.6 179 Fall Time tf − 61.1 122 Turn−On Delay Time (VDD = 15 Vdc, VGS = 4.5 Vdc, ID = 1.0 Adc, RG = 6.0 Ω) td(on) − 11.8 23 ns Rise Time tr − 51.3 102 Turn−Off Delay Time td(off) − 47.2 94.5 Fall Time tf − 62 104 Gate Charge (See Figure 8) (VDS = 15 Vdc, ID = 5.0 Adc, VGS = 10 Vdc) QT − 15.7 31.4 nC Q1 − 2.0 − Q2 − 4.6 − Q3 − 3.86 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 1.7 Adc, VGS = 0 Vdc) (IS = 1.7 Adc, VGS = 0 Vdc, TJ = 125°C) VSD − − 0.77 0.65 1.2 − Vdc Reverse Recovery Time (IS = 5.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/μs) trr − 54.5 − ns ta − 14.8 − tb − 39.7 − Reverse Recovery Stored Charge QRR − 0.048 − μC 1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. |
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