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EMIF06-MSD03F3 Datasheet(PDF) 3 Page - STMicroelectronics

Part # EMIF06-MSD03F3
Description  6-line low capacitance IPAD™ for micro-SD card with EMI filtering and ESD protection
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

EMIF06-MSD03F3 Datasheet(HTML) 3 Page - STMicroelectronics

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EMIF06-MSD03F3
Characteristics
Doc ID 018984 Rev 1
3/8
Table 3.
Electrical characteristic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VBR
Breakdown voltage
IR = 1 mA
14
16
V
IRM
Leakage current at VRM
VRM = 3 V
0.1
µA
R1, R2, R3,
R4, R5, R6
Serial resistance
Tolerance ±10 %, matching ±2 %
40
Ω
R9, R10,
R11, R12
Pull-up resistance
Tolerance ±10 %, matching ±2 %
50
k
Ω
R13
Pull-up resistance on CMD
Tolerance ±10 %
15
k
Ω
Cline
Data line capacitance
V = 0 V, F = 10 MHz, VOSC = 30 mV
10
12
pF
V = 1.8 V, F = 10 MHz, VOSC = 30 mV
7.5
10
V = 2.9 V, F = 10 MHz, VOSC = 30 mV
9
F0
Cut-off frequency
S21 = -3 dB
550
MHz
tR,tF
Rise and fall time
Cload = 10 pF, low-ref = 0.58 V,
high-ref = 1.27 V, VDDIO = 1.8 V
0.98
ns
Figure 3.
S21 attenuation measurements
Figure 4.
Analog crosstalk measurements
100.0k
1.0M
10.0M
100.0M
1.0G
-30.00
-25.00
-20.00
-15.00
-10.00
-5.00
0.00
Clk
Data0
Data1
Data2
Data3
Cmd
F (Hz)
S21 (dB)
dB
100.0k
1.0M
10.0M
100.0M
1.0G
-120.00
-110.00
-100.00
-90.00
-80.00
-70.00
-60.00
-50.00
-40.00
-30.00
-20.00
-10.00
0.00
Clk-Data0
Data3-SDData0
F (Hz)
Figure 5.
Line capacitance versus applied
voltage (typical values)
Figure 6.
Line capacitance versus frequency
(typical values)
C (pF)
0
1
2
3
4
5
6
7
8
9
10
11
12
0123
45
F=10 MHz
V
OSC=30 mV
T
AMB=25 °C
Clk
Data0
CMD
Data3
VBIAS(V)
0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
16.00
0
50
100
150
200
250
300
350
F=1MHz to 350MHz
Vosc=30mVRMS
Tj=25 °C
Line DATA/GND
A3/B3 (SDDATA1) &D3/C3 (SDDATA2)
F (MHz)
C (pF)



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