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RJK4002DPP-M0T2 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJK4002DPP-M0T2 Datasheet(HTML) 1 Page - Renesas Technology Corp |
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1 / 7 page ![]() R07DS0551EJ0200 Rev.2.00 Page 1 of 6 Aug 03, 2012 Preliminary Datasheet RJK4002DPP-M0 400V - 3A - MOS FET High Speed Power Switching Features Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) 1 2 3 D S G 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25 C) Item Symbol Value Unit Drain to source voltage VDSS 400 V Gate to source voltage VGSS 30 V Drain current ID Note4 3 A Drain peak current ID(pulse) Note1 6 A Body-drain diode reverse drain current IDR 3 A Body-drain diode reverse drain peak current IDR(pulse) Note1 6 A Avalanche current IAP Note3 2.5 A Avalanche energy EAR Note3 0.357 mJ Channel dissipation Pch Note 2 20 W Channel to case thermal Impedance ch-c 6.25 C/W Channel temperature Tch 150 C Storage temperature Tstg –55 to +150 C Notes: 1. PW 10 ms, duty cycle 1 % 2. Value at Tc = 25 C 3. STch = 25 C, Tch 150C 4. Pulse width limited by safe operating area. R07DS0551EJ0200 Rev.2.00 Aug 03, 2012 |
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