ICTE5 thru ICTE18C, 1N6373 thru 1N6386

www.vishay.com

Vishay General Semiconductor

Revision: 18-Sep-12

1

Document Number: 88356

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional types, use C suffix (e.g. ICTE18C).

Electrical characteristics apply in both directions.

FEATURES

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• 1500 W peak pulse power capability with a

10/1000 μs waveform, repetitive rate (duty

cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, and telecommunication.

MECHANICAL DATA

Case: Molded epoxy body over passivated junction

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant and commercial grade

Base P/NHE3 - RoHS compliant and AEC-Q101 qualified

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: For uni-directional types the color band denotes

cathode end, no marking on bi-directional types

Notes

PRIMARY CHARACTERISTICS

5.0 V to 18 V

6.0 V to 21.2 V

9.2 V to 21.2 V

1500 W

6.5 W

200 A

175 °C

Polarity

Uni-directional, bi-directional

Package

1.5KE

Case Style 1.5KE

PARAMETER

SYMBOL

LIMIT

UNIT

1500

W

See next table

A

6.5

W

200

A

Maximum instantaneous forward voltage at 100 A for uni-directional only

3.5

V

Operating junction and storage temperature range

- 55 to + 175

°C