1

MRF8372R1, R2

MOTOROLA RF DEVICE DATA

The RF Line

NPN Silicon

RF Low Power Transistor

Designed primarily for wideband large signal predriver stages in 800 MHz

and UHF frequency ranges.

• Specified @ 12.5 V, 870 MHz Characteristics

Output Power = 750 mW

Minimum Gain = 8.0 dB

Efficiency 60% (Typ)

• State–of–the–Art Technology

Fine Line Geometry

Gold Top Metal and Wires

Silicon Nitride Passivated

Ion Implanted Arsenic Emitters

• Circuit board photomaster available upon request by contacting

RF Tactical Marketing in Phoenix, AZ.

• Order MRF8372 in tape and reel packaging by adding suffix:

R1 suffix = 500 units per reel

R2 suffix = 2,500 units per reel

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

16

Vdc

Collector–Base Voltage

VCBO

36

Vdc

Emitter–Base Voltage

VEBO

4.0

Vdc

Collector Current — Continuous

IC

200

mAdc

Total Device Dissipation @ TC = 75°C (1)

Derate above 75

°C

PD

1.67

22.2

Watts

mW/

°C

Storage Temperature Range

TJ, Tstg

– 55 to +150

°C

Maximum Junction Temperature

TJmax

150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

45

°C/W

DEVICE MARKING

MRF8372 = 8372

NOTE:

1. Case temperature measured on collector lead immediately adjacent to body of package.

Order this document

by MRF8372/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MRF8372R1, R2

750 mW, 870 MHz

RF LOW POWER

TRANSISTOR

NPN SILICON

CASE 751–05, STYLE 1

SORF (SO–8)

(Replaces MRF837/D)