BCP52_13 datasheet(13/22 Pages) NXP

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BCP52_BCX52_BC52PA

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Product data sheet

Rev. 9 — 18 October 2011

13 of 22

NXP Semiconductors

BCP52; BCX52; BC52PA

60 V, 1 A PNP medium power transistors

VCE = 2V

(1) Tamb = 100 C

(2) Tamb =25 C

(3) Tamb = 55 C

Tamb =25 C

Fig 15. DC current gain as a function of collector

current; typical values

Fig 16. Collector current as a function of

collector-emitter voltage; typical values

VCE = 2V

(1) Tamb = 55 C

(2) Tamb =25 C

(3) Tamb = 100 C

IC/IB =10

(1) Tamb = 100 C

(2) Tamb =25 C

(3) Tamb = 55 C

Fig 17. Base-emitter voltage as a function of collector

current; typical values

Fig 18. Collector-emitter saturation voltage as a

function of collector current; typical values

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100

200

300

hFE

IC (A)

–10–4

–10

–1

–10–3

–10–1

–10–2

(1)

(2)

(3)

VCE (V)

−2.0

−1.6

−0.8

−1.2

−0.4

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−0.8

−0.4

−1.2

−1.6

(A)

−4.5

−9

−13.5

−18

−22.5

−27

−31.5

IB (mA) = −45 −40.5 −36

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–0.4

–0.8

–1.2

VBE

(V)

0.0

IC (mA)

–10–1

–104

–103

–1

–102

–10

(1)

(2)

(3)

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–1

–10–1

–10

VCEsat

(V)

–10–2

IC (mA)

–10–1

–104

–103

–1

–102

–10

(1)

(2)

(3)

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