2SC5398 datasheet(1/3 Pages) ISAHAYA

Part #	2SC5398

Description	For Low Frequency Amplify Application Silicon NPN Epitaxial Type Micro

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Manufacturer	ISAHAYA [Isahaya Electronics Corporation]

Direct Link	http://www.idc-com.co.jp

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〈transistor〉

2SC5398

For Low Frequency Amplify Application

Silicon NPN Epitaxial Type Micro（Frame type）

ISAHAYA ELECTRONICS CORPORATION

DESCRIPTION

2SC5398 is a silicon NPN epitaxial type transistor.

It is designed for low frequency voltage amplify

application.

OUTLINE DRAWING

UNIT：mm

TERMINAL CONNECTOR

①：EMITTER

②：COLLECTOR

③：BASE

Item

Q

R

S

hFE

120～270

180～390

270～560

MAXIMUM RATINGS（Ta=25℃）

Symbol

Parameter

Ratings

Unit

VCBO

Collector to Base voltage

50

V

VEBO

Emitter to Base voltage

6

V

VCEO

Collector to Emitter voltage

50

V

IC

Collector current

100

mA

PC

Collector dissipation

450

mW

Tj

Junction temperature

+150

℃

Tstg

Storage temperature

-55～+150

℃

EIAJ： -

JEDEC： -

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

V(BR)CEO

C to E break down voltage

I

C= 100μA , RBE= ∞

50

-

V

ICBO

Collector cut off current

V

CB= 50V , I E= 0mA

-

0.5

μA

IEBO

Emitter cut off current

V

EB= 4V , I C= 0mA

-

－

0.5

μA

hFE

DC forward current gain ※

V

CE = 6V , IC= 1mA

120

(※)

560

-

hFE

DC forward current gain

V

CE = 6V , IC= 0.1mA

70

－

-

VCE(sat)

C to E Saturation voltage

I

C =30mA , I B= 1.5mA

-

0.3

V

fT

Gain bandwidth product

V

CE= 6V , I E= -10mA

-

200

-

MHz

Cob

Collector output capacitance

V

CB= 6V , I E= 0mA,f=1MHz

-

2.0

-

pF

※：It shows hFE classification at right table.

MARKING

3

Q

9 8

□□

hFE Item

Type name

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