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RJK6002DPE Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJK6002DPE Datasheet(HTML) 1 Page - Renesas Technology Corp |
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1 / 7 page ![]() R07DS0214EJ0100 Rev.1.00 Page 1 of 6 Jun 21, 2012 Preliminary Datasheet RJK6002DPE 600V - 2A - MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline 1 2 3 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 1. Gate 2. Drain 3. Source 4. Drain D G S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 600 V Gate to source voltage VGSS 30 V Drain current ID 2 A Drain peak current ID (pulse) Note1 4 A Body-drain diode reverse drain current IDR 2 A Body-drain diode reverse drain peak current IDR (pulse) Note1 4 A Avalanche current IAP Note3 1 A Avalanche energy EAR Note3 0.05 mJ Channel dissipation Pch Note2 35 W Channel to case thermal impedance ch-c 3.57 C/W Channel temperature Tch 150 C Storage temperature Tstg –55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25 C 3. STch = 25 C, Tch 150C R07DS0214EJ0100 Rev.1.00 Jun 21, 2012 |
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