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RJM0407JSC Datasheet(PDF) 8 Page - Renesas Technology Corp |
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RJM0407JSC Datasheet(HTML) 8 Page - Renesas Technology Corp |
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8 / 12 page ![]() RJM0407JSC Preliminary R07DS0368EJ0100 Rev.1.00 Page 8 of 11 Sep 20, 2012 MOS4, 5, 6 (Pch) Gate Charge Qg (nc) Dynamic Input Characteristics Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage Avalanche Test Circuit Avalanche Waveform 0 –10 –20 –30 10000 1000 100 10 Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage 0 –4 –8 –12 –16 –20 0 0 –10 –20 –30 –40 –50 5 1015 2025 0 –0.4 –0.8 –1.2 –2.0 –1.6 –20 –5 –15 –10 D. U. T Rg IAP Monitor VDS Monitor VDD 50 Ω Vin –15 V 0 ID VDS IAP V(BR)DSS L VDD EAR = L • I AP 2 • 2 1 VDSS VDSS – VDD f = 1 MHz VGS = 0 Ciss Coss Crss VGS Tc = 25 °C ID = –20 A VDS VDD = –25 V –10 V –5 V VGS = 0 V, 5 V –10 V 50 40 30 20 10 25 50 75 100 125 150 175 0 Channel Temperature Tch ( °C) Avalanche Energy vs. Channel Temperature Derating IAP = –15 A VDD = –25 V duty < 0.1 % Rg ≥ 50 Ω Tc = 25 °C Pulse Test VDD = –25 V –10 V –5 V |
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