STP20N95K5 datasheet(4/20 Pages) STMICROELECTRONICS

4 / 20 page

Electrical characteristics

STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5

4/20

Doc ID 16825 Rev 4

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS= 0

950

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 950 V,

VDS = 950 V, Tc=125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 20 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID= 9 A

0.275 0.330

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS =100 V, f=1 MHz, VGS=0

1500

Coss

Output capacitance

Crss

Reverse transfer

capacitance

5pF

Co(tr)

(1)

Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when

VDS increases from 0 to 80% VDSS

Equivalent capacitance time

VGS = 0, VDS = 0 to 760 V

-170

Co(er)

(2)

energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss

when VDS increases from 0 to 80% VDSS

Equivalent capacitance

energy related

-65

Intrinsic gate resistance

f = 1MHz open drain

3.5

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 760 V, ID = 9 A

VGS =10 V

(see Figure 19)

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