PIC18F2610ESLASHSOSQTP datasheet(319/376 Pages) MICROCHIP

319 / 376 page

DS39636D-page 321

PIC18F2X1X/4X1X

Supply Current (IDD)(2,3)

PIC18LF2X1X/4X1X

250

500

μA-40°C

VDD = 2.0V

FOSC = 1 MHZ

(PRI_RUN,

EC oscillator)

260

500

μA+25°C

250

500

μA+85°C

PIC18LF2X1X/4X1X

550

650

μA-40°C

VDD = 3.0V

480

650

μA+25°C

460

650

μA+85°C

All devices

1.2

1.6

-40°C

VDD = 5.0V

1.1

1.5

+25°C

1.0

1.4

+85°C

Extended devices only

1.0

3.5

+125°C

PIC18LF2X1X/4X1X 0.72

2.0

-40°C

VDD = 2.0V

FOSC = 4 MHz

(PRI_RUN,

EC oscillator)

0.74

2.0

+25°C

0.74

2.0

+85°C

PIC18LF2X1X/4X1X

1.3

3.0

-40°C

VDD = 3.0V

1.3

3.0

+25°C

1.3

3.0

+85°C

All devices

2.7

6.0

-40°C

VDD = 5.0V

2.6

6.0

+25°C

2.5

6.0

+85°C

Extended devices only

2.6

7.0

+125°C

Extended devices only

8.4

+125°C

VDD = 4.2V

FOSC = 25 MHz

(PRI_RUN,

EC oscillator)

+125°C

VDD = 5.0V

All devices

-40°C

VDD = 4.2V

FOSC = 40 MHZ

(PRI_RUN,

EC oscillator)

+25°C

+85°C

All devices

-40°C

VDD = 5.0V

+25°C

+85°C

25.2

DC Characteristics:

Power-Down and Supply Current

PIC18F2X1X/4X1X (Industrial)

PIC18LF2X1X/4X1X (Industrial) (Continued)

PIC18LF2X1X/4X1X

(Industrial)

Standard Operating Conditions (unless otherwise stated)

Operating temperature

-40°C

≤ TA ≤ +85°C for industrial

PIC18F2X1X/4X1X

(Industrial, Extended)

Standard Operating Conditions (unless otherwise stated)

Operating temperature

-40°C

≤ TA ≤ +85°C for industrial

-40°C

≤ TA ≤ +125°C for extended

ParamNo.

Device

Typ

Max

Units

Conditions

Legend:

Shading of rows is to assist in readability of the table.

Note 1:

The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured

with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD or VSS and all features that

add delta current disabled (such as WDT, Timer1 Oscillator, BOR, etc.).

The supply current is mainly a function of operating voltage, frequency and mode. Other factors, such as I/O pin

loading and switching rate, oscillator type and circuit, internal code execution pattern and temperature, also have

an impact on the current consumption.

The test conditions for all IDD measurements in active operation mode are:

OSC1 = external square wave, from rail-to-rail; all I/O pins tri-stated, pulled to VDD;

MCLR = VDD; WDT enabled/disabled as specified.

For RC oscillator configurations, current through REXT is not included. The current through the resistor can be

estimated by the formula Ir = VDD/2REXT (mA) with REXT in k

Ω.

Low-power Timer1 oscillator selected.

BOR and HLVD enable internal band gap reference. With both modules enabled, current consumption will be less

than the sum of both specifications.

PIC18F2610E/SOSQTP Datasheet(PDF) 319 Page - Microchip Technology

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