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NLASB3157DFT2 Datasheet(PDF) 3 Page - ON Semiconductor

Part # NLASB3157DFT2
Description  The NLASB3157 is an advanced CMOS analog switch fabricated with silicon gate CMOS technology
PDF  10 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NLASB3157DFT2 Datasheet(HTML) 3 Page - ON Semiconductor

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NLASB3157
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS − NLASB3157
Symbol
Parameter
Test Conditions
VCC
(V)
TA = +255C
TA = −405C to +855C
Unit
Min
Typ
Max
Min
Max
VIH
HIGH Level
Input Voltage
1.65−1.95
2.3−5.5
0.75 VCC
0.7 VCC
V
VIL
LOW Level
Input Voltage
1.65−1.95
2.3−5.5
0.25 VCC
0.3 VCC
V
IIN
Input Leakage Current
0 v VIN v 5.5 V
0−5.5
"0.05
"0.1
"1
mA
IOFF
OFF State Leakage
Current
0 v A, B v VCC
1.65−5.5
"0.05
"0.1
"1
mA
RON
Switch On Resistance
(Note 3)
VIN = 0 V, IO = 30 mA
VIN = 2.4 V, IO = −30 mA
VIN = 4.5 V, IO = −30 mA
4.5
3.0
5.0
7.0
7.0
12
15
W
VIN = 0 V, IO = 24 mA
VIN = 3 V, IO = −24 mA
3.0
4.0
10
9.0
20
W
VIN = 0 V, IO = 8 mA
VIN = 2.3 V, IO = −8 mA
2.3
5.0
13
12
30
W
VIN = 0 V, IO = 4 mA
VIN = 1.65 V, IO = −4 mA
1.65
6.5
17
20
50
W
ICC
Quiescent Supply
Current
All Channels ON or
OFF
VIN = VCC or GND
IOUT = 0
5.5
1.0
10
mA
Analog Signal Range
VCC
0
VCC
0
VCC
V
RRANGE On Resistance
Over Signal Range
(Note 3) (Note 7)
IA = −30 mA, 0 v VBn
v VCC
IA = −24 mA, 0 v VBn
v VCC
IA = −8 mA, 0 v VBn
v VCC
IA = −4 mA, 0 v VBn
v VCC
4.5
3.0
2.3
1.65
25
50
100
300
W
DRON
On Resistance Match
Between Channels
(Note 3) (Note 4)
(Note 5)
IA = −30 mA, VBn = 3.15
IA = −24 mA, VBn = 2.1
IA = −8 mA, VBn = 1.6
IA = −4 mA, VBn = 1.15
4.5
3.0
2.3
1.65
0.15
0.2
0.5
0.5
W
Rflat
On Resistance
Flatness (Note 3)
(Note 4) (Note 6)
IA = −30 mA, 0 v VBn
v VCC
IA = −24 mA, 0 v VBn
v VCC
IA = −8 mA, 0 v VBn
v VCC
IA = −4 mA, 0 v VBn
v VCC
5.0
3.3
2.5
1.8
6.0
12
28
125
W
3. Measured by the voltage drop between A and B pins at the indicated current through the switch. On Resistance is determined by the lower
of the voltages on the two (A or B Ports).
4. Parameter is characterized but not tested in production.
5. DRON = RON max − RON min measured at identical VCC, temperature and voltage levels.
6. Flatness is defined as the difference between the maximum and minimum value of On Resistance over the specified range of conditions.
7. Guaranteed by Design.



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