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2SC4227 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # 2SC4227
Description  NPN EPITAXIAL SILICON RF TRANSISTOR
PDF  9 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC4227 Datasheet(HTML) 4 Page - Renesas Technology Corp

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Data Sheet PU10451EJ01V0DS
2
2SC4227
ELECTRICAL CHARACTERISTICS (TA = +25
°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 10 V, IE = 0 mA
−
−
0.8
µA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
−
−
0.8
µA
DC Current Gain
hFE
Note 1
VCE = 3 V, IC = 7 mA
40
−
240
−
RF Characteristics
Gain Bandwidth Product
fT
VCE = 3 V, IC = 7 mA
4.5
7.0
–
GHz
Insertion Power Gain
S21e2 VCE = 3 V, IC = 7 mA, f = 1 GHz
10
12
−
dB
Noise Figure
NF
VCE = 3 V, IC = 7 mA, f = 1 GHz
−
1.4
2.7
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 3 V, IE = 0 mA, f = 1 MHz
−
0.45
0.9
pF
Notes 1. Pulse measurement: PW
≤ 350
µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
R33
R34
R35
Marking
R33
R34
R35
hFE Value
40 to 90
70 to 150
110 to 240



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