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STM8L052C6 Datasheet(PDF) 63 Page - STMicroelectronics |
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STM8L052C6 Datasheet(HTML) 63 Page - STMicroelectronics |
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63 / 102 page ![]() STM8L052C6 Electrical parameters Doc ID 023331 Rev 1 63/102 In the following table, data is based on characterization results, unless otherwise specified. Figure 11. Typ. IDD(LPW) vs. VDD (LSI clock source) Table 20. Total current consumption in Low power wait mode at VDD = 1.8V to 3.6V Symbol Parameter Conditions(1) Typ Max Unit IDD(LPW) Supply current in Low power wait mode LSI RC osc. (at 38 kHz) all peripherals OFF TA = -40 °C to 25 °C 33.3 μA TA = 55 °C 3.3 3.6 TA = 85 °C 4.4 5 with TIM2 active(2) TA = -40 °C to 25 °C 3.4 3.7 TA = 55 °C 3.7 4 TA = 85 °C 4.8 5.4 LSE external clock(3) (32.768 kHz) all peripherals OFF TA = -40 °C to 25 °C 2.35 2.7 TA = 55 °C 2.42 2.82 TA = 85 °C 3.10 3.71 with TIM2 active (2) TA = -40 °C to 25 °C 2.46 2.75 TA = 55 °C 2.50 2.81 TA = 85 °C 3.16 3.82 1. No floating I/Os. 2. Timer 2 clock enabled and counter is running. 3. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for extenal crystal, the LSE consumption (IDD LSE) must be added. Refer to Table 29. 0.00 2.00 4.00 6.00 8.00 10.00 12.00 14.00 16.00 1.8 2.1 2.6 3.1 3.6 VDD [V] -40°C 25°C 85°C ai18217V2 |
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