MMDF2P03HD datasheet(1/10 Pages) ONSEMI

Part #	MMDF2P03HD

Description	Power MOSFET 2 Amps, 30 Volts P?묬hannel SO??, Dual

PDF	10 Pages

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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August, 2006 − Rev. 8

1

Publication Order Number:

MMDF2P03HD/D

MMDF2P03HD

Preferred Device

Power MOSFET

2 Amps, 30 Volts

P−Channel SO−8, Dual

These miniature surface mount MOSFETs feature ultra low RDS(on)

and true logic level performance. They are capable of withstanding

high energy in the avalanche and commutation modes and the

drain−to−source diode has a very low reverse recovery time.

MiniMOS

t devices are designed for use in low voltage, high speed

switching applications where power efficiency is important. Typical

applications are dc−dc converters, and power management in portable

and battery powered products such as computers, printers, cellular and

cordless phones. They can also be used for low voltage motor controls

in mass storage products such as disk drives and tape drives. The

avalanche energy is specified to eliminate the guesswork in designs

where inductive loads are switched and offer additional safety margin

against unexpected voltage transients.

• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery

Life

• Logic Level Gate Drive − Can Be Driven by Logic ICs

• Miniature SO−8 Surface Mount Package − Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• IDSS Specified at Elevated Temperature

• Avalanche Energy Specified

• Mounting Information for SO−8 Package Provided

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1.)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

30

Vdc

Drain−to−Gate Voltage (RGS = 1.0 MΩ)

VDGR

30

Vdc

Gate−to−Source Voltage − Continuous

VGS

± 20

Vdc

Drain Current − Continuous @ TA = 25°C

Drain Current − Continuous @ TA = 100°C

Drain Current − Single Pulse (tp ≤ 10 μs)

ID

IDM

3.0

1.9

15

Adc

Apk

Total Power Dissipation @ TC = 25°C (Note 2.)

PD

2.0

Watts

Operating and Storage Temperature Range

TJ, Tstg

− 55

to 150

°C

Single Pulse Drain−to−Source Avalanche

Energy − Starting TJ = 25°C

(VDD = 30 Vdc, VGS = 5.0 Vdc, Peak

IL = 6.0 Apk, L = 18 mH, RG = 25 Ω)

EAS

324

mJ

Thermal Resistance − Junction to Ambient

(Note 2.)

RθJA

62.5

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

TL

260

°C

1. Negative sign for P−Channel device omitted for clarity.

2. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided)

with one die operating, 10 sec. max.

Source−1

1

2

3

4

8

7

6

5

Top View

Gate−1

Source−2

Gate−2

Drain−1

Drain−2

1

8

2 AMPERES

30 VOLTS

RDS(on) = 200 mW

Device

Package

Shipping

ORDERING INFORMATION

MMDF2P03HDR2

SO−8

2500 Tape & Reel

SO−8, Dual

CASE 751

STYLE 11

http://onsemi.com

LYWW

MARKING

DIAGRAM

D2P03

L

= Location Code

Y

= Year

WW

= Work Week

PIN ASSIGNMENT

Preferred devices are recommended choices for future use

and best overall value.

P−Channel

D

S

G

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