MTP23P06VG datasheet(1/7 Pages) ONSEMI

Part #	MTP23P06VG

Description	Power MOSFET 23 Amps, 60 Volts

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Manufacturer	ONSEMI [ON Semiconductor]

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June, 2006 − Rev. 4

1

Publication Order Number:

MTP23P06V/D

MTP23P06V

Preferred Device

Power MOSFET

23 Amps, 60 Volts

P−Channel TO−220

This Power MOSFET is designed to withstand high energy in the

avalanche and commutation modes. Designed for low voltage, high

speed switching applications in power supplies, converters and power

motor controls, these devices are particularly well suited for bridge

circuits where diode speed and commutating safe operating areas are

critical and offer additional safety margin against unexpected voltage

transients.

Features

• Avalanche Energy Specified

• IDSS and VDS(on) Specified at Elevated Temperature

• Pb−Free Package is Available*

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

60

Vdc

Drain−to−Gate Voltage (RGS = 1.0 MW)

VDGR

60

Vdc

Gate−to−Source Voltage

− Continuous

− Non−repetitive (tp ≤ 10 ms)

VGS

VGSM

± 15

± 25

Vdc

Vpk

Drain Current − Continuous @ 25

°C

Drain Current − Continuous @ 100

°C

Drain Current − Single Pulse (tp ≤ 10 ms)

ID

IDM

23

15

81

Adc

Apk

Total Power Dissipation @ 25

°C

Derate above 25

°C

PD

90

0.60

W

W/

°C

Operating and Storage Temperature Range

TJ, Tstg

− 55 to 175

°C

Single Pulse Drain−to−Source Avalanche

Energy − Starting TJ = 25°C

(VDD = 25 Vdc, VGS = 10 Vdc, Peak

IL = 23 Apk, L = 3.0 mH, RG = 25 W)

EAS

794

mJ

Thermal Resistance − Junction−to−Case

Thermal Resistance − Junction−to−Ambient

RqJC

RqJA

1.67

62.5

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8

″ from Case for 10 seconds

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

D

S

G

P−Channel

23 AMPERES, 60 VOLTS

RDS(on) = 120 mW

Preferred devices are recommended choices for future use

and best overall value.

Device

Package

Shipping

ORDERING INFORMATION

MTP23P06V

TO−220AB

50 Units/Rail

http://onsemi.com

MTP23P06VG

TO−220AB

(Pb−Free)

50 Units/Rail

TO−220AB

CASE 221A

STYLE 5

1

2

3

4

MARKING DIAGRAM

AND PIN ASSIGNMENT

MTP23P06V = Device Code

A

= Location Code

Y

= Year

WW

= Work Week

G

= Pb−Free Package

MTP

23P06VG

AYWW

1

Gate

3

Source

4

Drain

2

Drain

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