RFD12N06RLESM datasheet(4/10 Pages) FAIRCHILD

4 / 10 page

RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE

RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Rev. B

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA

NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING

CAPABILITY

FIGURE 7. TRANSFER CHARACTERISTICS

FIGURE 8. SATURATION CHARACTERISTICS

FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

FIGURE 10. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

Typical Performance Curves (Continued)

100

µs

100

110

0.1

100

10ms

1ms

VDS, DRAIN TO SOURCE VOLTAGE (V)

LIMITED BY rDS(ON)

AREA MAY BE

OPERATION IN THIS

TJ = MAX RATED TC = 25

SINGLE PULSE

0.01

0.1

100

tAV, TIME IN AVALANCHE (ms)

STARTING TJ = 25

STARTING TJ = 150

tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)

If R = 0

If R

≠ 0

tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]

1.0

3.0

4.0

5.0

VGS, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

VDD = 15V

TJ = 175

TJ = 25

TJ = -55

2.0

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 3V

VGS = 4V

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

0123

VGS = 3.5V

TC = 25

VGS = 5V

VGS = 10V

ID = 7A

VGS, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

TC = 25

ID = 17A

ID = 12A

1.0

1.5

2.0

2.5

-80

-40

120

160

200

0.5

TJ, JUNCTION TEMPERATURE (

oC)

VGS = 10V, ID = 18A

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE

RFD12N06RLESM Datasheet(PDF) 4 Page - Fairchild Semiconductor

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