MAT04FY datasheet(2/12 Pages) AD

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ELECTRICAL CHARACTERISTICS (@ T

A = 25 C unless otherwise noted. Each transistor is individually tested. For matching

parameters (VOS, IOS,

∆hFE) each dual transistor combination is verified to meet stated limits. All tests made at endpoints unless otherwise noted.)

MAT04E

MAT04F

Parameter

Symbol

Conditions

Min

Typ

Max

Min

Typ

Max

Unit

Current Gain

hFE

µA ≤ IC ≤ 1 mA

0 V

≤ V

≤ 30 V1

400

800

300

600

Current Gain Match

∆hFE

IC = 100

µA

0 V

≤ VCB ≤ 30 V2

0.5

Offset Voltage

VOS

µA ≤ I

≤ 1 mA

0 V

≤ VCB ≤ 30 V3

200

100

400

µV

Offset Voltage Change vs.

∆VOS/∆IC

µA ≤ IC ≤ 1 mA

Collector Current

VCB = 0 V

525

µV

Offset Voltage Change vs. VCB

∆VOS/∆VCB 10 µA ≤ IC ≤ 1 mA

0 V

≤ VCB ≤ 30 V3

100

200

µV

Bulk Emitter Resistance

rBE

µA ≤ I

≤ 1 mA

VCB = 0 V

0.4

0.6

0.4

0.6

Ω

Input Bias Current

IC = 100

µA

0 V

≤ V

≤ 30 V

125

250

165

330

Input Offset Current

IOS

IC = 100

µA; VCB = 0 V

0.6

Breakdown Voltage

BVCEO

IC = 10

µA40

Collector Saturation Voltage

VCE(SAT)

IB = 100

µA; I

C = 1 mA

0.03

0.06

0.03

0.06

Collector-Base Leakage Current

ICBO

VCB = 40 V

Noise Voltage Density

VCB = 0 V; fO = 10 Hz

nV/

√Hz

IC = 1 mA; fO = 100 Hz

1.8

2.5

1.8

nV/

√Hz

fO = 1 kHz

1.8

2.5

1.8

nV/

√Hz

Gain Bandwidth Product

IC = 1 mA; VCE = 10 V

300

MHz

Output Capacitance

COBO

VCB = 15 V; IE = 0

f = 1 MHz

Input Capacitance

CEBO

VBE = 0 V; IC = 0

f = 1 MHz

NOTES

1Current gain measured at I

C = 10

µA, 100 µA and 1 mA.

2Current gain match is defined as:

∆

BFE

MIN

100(

)(

)

3Measured at I

C = 10

µA and guaranteed by design over the specified range of I

4Guaranteed by design.

5Sample tested.

Specifications subject to change without notice.

–2–

REV. D

MAT04–SPECIFICATIONS

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