AO7414_13 datasheet(2/4 Pages) AOSMD

2 / 4 page

AO7414

Symbol

Min

Typ

Max

Units

BVDSS

VDS=20V, VGS=0V

TJ=55°C

IGSS

±100

VGS(th)

Gate Threshold Voltage

0.5

0.68

ID(ON)

TJ=125°C

Ω

gFS

VSD

0.7

0.35

Ciss

260

320

Coss

Crss

4.5

Ω

2.9

3.8

Qgs

0.4

Qgd

0.6

tD(on)

2.5

3.2

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

=4.5V, V =10V, R =5

Ω,

Reverse Transfer Capacitance

VGS=0V, VDS=10V, f=1MHz

SWITCHING PARAMETERS

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Total Gate Charge

VGS=4.5V, VDS=10V, ID=2A

Gate Source Charge

Gate Drain Charge

Turn-On Rise Time

Zero Gate Voltage Drain Current

Gate-Body leakage current

Ω

IS=1A,VGS=0V

VDS=5V, ID=2A

VGS=2.5V, ID=1.8A

Forward Transconductance

Diode Forward Voltage

VGS=1.8V, ID=1A

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

Drain-Source Breakdown Voltage

On state drain current

ID=250µA, VGS=0V

VGS=4.5V, VDS=5V

VGS=4.5V, ID=2A

RDS(ON)

Static Drain-Source On-Resistance

IDSS

µA

VDS=VGS，ID=250µA

VDS=0V, VGS=±8V

3.2

tD(off)

trr

Qrr

3.4

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

VGS=4.5V, VDS=10V, RL=5Ω,

RGEN=6Ω

Body Diode Reverse Recovery Charge IF=2A, dI/dt=100A/µs

Turn-On Rise Time

Turn-Off DelayTime

IF=2A, dI/dt=100A/µs

Turn-Off Fall Time

Body Diode Reverse Recovery Time

A: The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The SOA

curve provides a single pulse rating.

Rev.2.0: April 2013

www.aosmd.com

Page 2 of 4

万和兴电子有限公司 www.whxpcb.com

AO7414 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

AO7414 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors

Html Pages

1 2 3 4

Datasheet Download

Link URL