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STS5N15F4 Datasheet(PDF) 4 Page - STMicroelectronics

Part # STS5N15F4
Description  N-channel 150 V, 0.057廓, 5 A, SO-8 STripFET??DeepGATE??Power MOSFET
PDF  11 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STS5N15F4 Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STS5N15F4
4/11
Doc ID 16083 Rev 2
Table 7.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD= 75 V, ID= 3 A,
RG=4.7 Ω, VGS=10 V
Figure 13 on page 7
-
13.5
5.1
39.7
11.4
-
ns
ns
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
ISD
Source-drain current
-
5
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
-
20
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
ISD = 6 A, VGS = 0
-
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 6 A,
di/dt = 100 A/µs,
VR = 120 V, TJ = 150 °C
Figure 15 on page 7
-
85.2
277.6
8.2
ns
nC
A



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