MC33897CTEFSLASHR2 datasheet(9/19 Pages) FREESCALE

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Analog Integrated Circuit Device Data

Freescale Semiconductor

33897

ELECTRICAL CHARACTERISTICS

DYNAMIC ELECTRICAL CHARACTERISTICS

Table 5. Dynamic Electrical Characteristics

Characteristics noted under conditions of -40

°C ≤ T

A ≤ 125 °C, unless otherwise stated. Voltages are relative to GND unless

otherwise noted. All positive currents are into the pin. All negative currents are out of the pin.

Characteristic

Symbol

Min

Typ

Max

Unit

BUS

Normal Speed Rising Output Delay

200

Ω ≤ R

L ≤ 3332 Ω, 1.0 μs ≤ Load Time Constants ≤ 4.0 μs

Measured from TXD = VIL to VBUS as follows:

Max Time to VBUSMOD = 3.7 V, 6.0 V ≤ VBATT ≤ 26.5 V

(10)

Min Time to VBUSMOD = 1.0 V, 6.0 V ≤ VBATT ≤ 26.5 V

(10)

Max Time to VBUSMOD = 2.7 V, VBATT = 5.0 V

(10)

Min Time to VBUSMOD = 1.0 V, VBATT = 5.0 V

(10)

tDLYNORMRO

2.0

–

6.3

μs

Normal Speed Falling Output Delay

200

Ω ≤ R

L ≤ 3332 Ω, 1.0 μs ≤ Load Time Constants ≤ 4.0 μs

Measured from TXD = VIH to VBUS as follows:

Max Time to VBUSMOD = 1.0 V, 6.0 V ≤ VBATT ≤ 26.5 V

(10)

Min Time to VBUSMOD = 3.7 V, 6.0 V ≤ VBATT ≤ 26.5 V

(10)

Max Time to VBUSMOD = 1.0 V, VBATT = 5.0 V

(10)

Min Time to VBUSMOD = 2.7 V, VBATT = 5.0 V

(10)

tDLYNORMFO

1.8

–

8.5

μs

High Speed Rising Output Delay

Ω ≤ R

L ≤ 135 Ω, 0.0 μs ≤ Load Time Constants ≤ 1.5 μs,

8.0 V

≤ V

BATT ≤ 16 V

Measured from TXD = VIL to VBUS as follows:

Max Time to VBUS = 3.7 V

(11)

Min Time to VBUS = 1.0 V

(11)

tDLYHSRO

0.1

–

1.7

μs

High Speed Falling Output Delay

Ω ≤ R

L ≤ 135 Ω, 0.0 μs ≤ Load Time Constants ≤ 1.5 μs,

8.0 V

≤ V

BATT ≤ 16 V

Measured from TXD = VIH to VBUS as follows:

Max Time to VBUS = 1.0 V

(11)

Min Time to VBUS = 3.7 V

(11)

tDLYHSFO

0.04

–

3.0

μs

Notes

10.

VBUSMOD is the voltage at the BUSMOD node in Figure 6, page 13.

11.

VBUS is the voltage at the BUS pin in Figure 7, page 14.

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