MTP1302

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

V(BR)DSS

30

—

—

Vdc

Zero Gate Voltage Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)

(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

—

—

10

100

µAdc

Gate–Body Leakage Current

(VGS = ± 20 Vdc, VDS = 0 Vdc)

IGSS

—

—

100

nAdc

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

VGS(th)

1.0

1.5

2.0

Vdc

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 10 Adc)

(VGS = 4.5 Vdc, ID = 5.0 Adc)

(VGS = 10 Vdc, ID = 42 Adc)

RDS(on)

—

—

—

19

26

19.5

22

29

—

m

W

Drain–to–Source On–Voltage

(VGS = 10 Vdc, ID = 20 Adc)

(VGS = 10 Vdc, ID = 10 Adc, TJ = 150°C)

(VGS = 10 Vdc, ID = 42 Adc)

VDS(on)

—

—

—

0.38

—

0.82

0.5

0.33

—

Vdc

Forward Transconductance

(VDS = 10 Vdc, ID = 10 Adc)

gFS

10

16

—

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

25 Vdc V

0 Vdc

Ciss

—

755

1162

pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

—

370

518

Transfer Capacitance

f = 1.0 MHz)

Crss

—

102

204

SWITCHING CHARACTERISTICS(2)

Turn–On Delay Time

(V

15 Vd

I

20 Ad

td(on)

—

7.2

15

ns

Rise Time

(VDD = 15 Vdc, ID = 20 Adc,

VGS =10Vdc

tr

—

52

104

Turn–Off Delay Time

VGS = 10 Vdc,

RG = 9.1 Ω)

td(off)

—

45

90

Fall Time

G

)

tf

—

73

146

Gate Charge

(V

24 Vd

I

20 Ad

QT

—

14.5

21.8

nC

(VDS = 24 Vdc, ID = 20 Adc,

Q1

—

2.2

—

( DS

, D

,

VGS = 5.0 Vdc)

Q2

—

8.8

—

Q3

—

6.8

—

Gate Charge

(V

24 Vd

I

20 Ad

QT

—

27

40.5

nC

(VDS = 24 Vdc, ID = 20 Adc,

Q1

—

2.2

—

( DS

, D

,

VGS = 10 Vdc)

Q2

—

10

—

Q3

—

7.2

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 20 Adc, VGS = 0 Vdc)

(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

—

0.83

0.79

1.1

—

Vdc

Reverse Recovery Time

(I

20 Ad

V

0 Vd

trr

—

38

—

ns

(IS = 20 Adc, VGS = 0 Vdc,

ta

—

19

—

( S

,

GS

,

dIS/dt = 100 A/µs)

tb

—

20

—

Reverse Recovery Stored Charge

QRR

—

36

—

µC

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.