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REV:A

QW-JB044

Comchip Technology CO., LTD.

Company reserves the right to improve product design , functions and reliability without notice.

Parameter

Unit

Non-repetitive peak reverse voltage

Average forward current

Operating junction temperature range

Storage temperature

Symbol

CDBCT320-HF

CDBCT340-HF

CDBCT360-HF

20

40

3

100

-55 to +125

-55 ~ +150

60

V

A

A

°C

°C

Parameter

Unit

Reverse peak reverse current

Forward voltage (Note1)

Symbol

Typ.

Max.

mA

V

ºC/W

Conditions

CDBCT320-HF

CDBCT340-HF

CDBCT360-HF

Junction to lead (Note 2)

0.5

0.33

0.38

0.47

0.38

0.48

0.65

CDBCT3100-HF

100

Peak forward surge current

@8.3ms single half sine-wave

-55 to +150

CDBCT3100-HF

Min.

0.50

0.70

0.48

0.58

0.78

0.85

Type

Junction capacitance

pF

Cj

0.025

17

180

Thermal resistance

Junction to ambient (Note 2)

55

ºC/W

Notes: (1) Pulse test width pw=300usec, 1% duty cycle.

(2)Mounted on P.C. board with 0.2*0.2”(5.0*5.0mm) copper pad areas.

Forward current: 3.0A

Reverse voltage: 20 to 100V

RoHS Device

Features

- Low power loss, High efficiency.

- High current capability, low VF

Mechanical Data

- Polarity: Laser cathode band marking.

- Weight: 0.093 grams (approx).

.

Halogen Free

- Plastic package has underwriters laboratory

flammability classification 94V-0.

- Case: Packed with FRP substrate and epoxy underfilled.

- Terminals: Pure Tin plated (Lead-Free),solderable

per MIL-STD-750, method 2026.

CDBCT320-HF Thru. CDBCT3100-HF

Circuit diagram

- Lead less chip form, no lead damage.

SMD Schottky Barrier Diode

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Dimensions in inches and (millimeter)

0.319(8.10)

0.311(7.90)

0.201(5.10)

0.193(4.90)

0.081(2.05)

0.073(1.85)

0.081(2.05)

0.073(1.85)

0.041(1.05)

0.053(1.35)

R0

.03

2(0

.82

)

3220/DO-214AB

R0

.03

1(0

.78

)

0.154(3.90)

Typ.