MTP2P50E

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

0

4

8

28

0

1

2

3

4

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

2

3

4

5

6

7

0

1

2

3

4

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0

1

2

2.5

3.5

4

0

2

6

10

0

1

2

3

4

4

4.5

5

5.5

6

ID, DRAIN CURRENT (AMPS)

Figure 3. On–Resistance versus Drain Current

and Temperature

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

0.5

1

1.5

2

1

10

100

1000

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On–Resistance Variation with

Temperature

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 6. Drain–To–Source Leakage

Current versus Voltage

TJ = 25°C

VDS ≥ 10 V

TJ = – 55°C

25

°C

100

°C

TJ = 100°C

TJ = 25°C

VGS = 0 V

VGS = 10 V

VGS = 10 V

VGS = 10 V

ID = 1 A

12

16

6 V

5 V

3.5

2.5

1.5

0.5

2.5

3.5

4.5

5.5

6.5

4

8

3

1.5

0.5

25

°C

– 55

°C

VGS = 10 V

15 V

– 50

– 25

0

25

50

75

100

125

150

0

100

50

150

200

250

500

300

350

400

450

TJ = 125°C

100

°C

25

°C

0.5

1.5

2.5

3.5

3.5

2.5

1.5

0.5

20

24

4 V

8 V

7 V

5.75

5.25

4.75

4.25