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PACDN1404CG Datasheet(PDF) 2 Page - ON Semiconductor |
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PACDN1404CG Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 5 page ![]() PACDN1404 http://onsemi.com 2 PACKAGE / PINOUT DIAGRAMS Top View (Bumps Down View) PACDN1404 6−Bump WLCSP Package Orientation Marking A B1 B2 B3 A1 A2 A3 D14 + B 12 3 Bottom View (Bumps Up View) Top View (Bumps Down View) PACDN1408 10−Bump WLCSP Package A B1 B2 B3 A1 A2 A3 DN1408 B 12 3 Bottom View (Bumps Up View) B4 B5 A4 A5 Orientation Marking + 45 SPECIFICATIONS Table 1. ABSOLUTE MAXIMUM RATINGS Parameter Rating Units Storage Temperature Range −65 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Table 2. STANDARD OPERATING CONDITIONS Parameter Rating Units Operating Temperature Range −40 to +85 C Table 3. ELECTRICAL OPERATING CHARACTERISTICS (Note 1) Symbol Parameter Conditions Min Typ Max Units VREV Reverse Standoff Voltage IDIODE = 10 mA 5.5 V ILEAK Leakage Current VIN = 3.3 V DC 100 nA VSIG Signal Clamp Voltage Positive Clamp Negative Clamp ILOAD = 10 mA 5.6 −1.2 6.8 −0.8 8.0 −0.4 V VESD In−system ESD Withstand Voltage a) Human Body Model, MIL−STD−883, Method 3015 b) Contact Discharge per IEC 61000−4−2 Level 4 (Note 2) 30 25 kV VCL Clamping Voltage during ESD Discharge MIL−STD−883 (Method 3015), 8 kV Positive Transients Negative Transients (Note 2) +12 −8 V C Channel Capacitance At 2.5 V DC, f = 1 MHz 39 47 pF 1. TA = 25C unless otherwise specified. GND in this document refers to the lower supply voltage. 2. ESD applied to channel pins with respect to GND, one at a time. All other channels are open. All GND pins tied to ground. |
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