M25PX64-VMF6TP datasheet(13/70 Pages) NUMONYX

13 / 70 page

M25PX64

Operating features

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Operating features

4.1

Page programming

To program one data byte, two instructions are required: write enable (WREN), which is one

byte, and a page program (PP) sequence, which consists of four bytes plus data. This is

followed by the internal program cycle (of duration tPP).

To spread this overhead, the page program (PP) instruction allows up to 256 bytes to be

programmed at a time (changing bits from ‘1’ to ‘0’), provided that they lie in consecutive

addresses on the same page of memory.

For optimized timings, it is recommended to use the page program (PP) instruction to

program all consecutive targeted bytes in a single sequence versus using several page

program (PP) sequences with each containing only a few bytes (see Page program (PP)

and Table 18: AC characteristics).

4.2

Dual input fast program

The dual input fast program (DIFP) instruction makes it possible to program up to 256 bytes

using two input pins at the same time (by changing bits from ‘1’ to ‘0’).

For optimized timings, it is recommended to use the dual input fast program (DIFP)

instruction to program all consecutive targeted bytes in a single sequence rather to using

several dual input fast program (DIFP) sequences each containing only a few bytes (see

Section 6.12: Dual input fast program (DIFP)

4.3

Subsector erase, sector erase and bulk erase

The page program (PP) instruction allows bits to be reset from ‘1’ to ’0’. Before this can be

applied, the bytes of memory need to have been erased to all 1s (FFh). This can be

achieved either a subsector at a time, using the subsector erase (SSE) instruction, a sector

at a time, using the sector erase (SE) instruction, or throughout the entire memory, using the

bulk erase (BE) instruction. This starts an internal erase cycle (of duration tSSE, tSE or tBE).

The erase instruction must be preceded by a write enable (WREN) instruction.

4.4

Polling during a write, program or erase cycle

A further improvement in the time to write status register (WRSR), program OTP (POTP),

program (PP), dual input fast program (DIFP) or erase (SSE, SE or BE) can be achieved by

not waiting for the worst case delay (tW, tPP, tSSE, tSE, or tBE). The write in progress (WIP) bit

is provided in the status register so that the application program can monitor its value,

polling it to establish when the previous write cycle, program cycle or erase cycle is

complete.

4.5

Active power, standby power and deep power-down modes

When Chip Select (S) is Low, the device is selected, and in the active power mode.

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